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參數(shù)資料
| 型號(hào)： | DIM800DDM17-E |
| 英文描述： | IGBT Modules - Dual Switch |
| 中文描述： | IGBT模塊-雙開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 203K |
| 代理商： | DIM800DDM17-E |
DIM800NSM33-A000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
200
400
600
800
1000
1200
1400
1600
0
2
4
1
3
5
6
Collector-emitter voltage, V
ce
- (V)
C
C
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 25
C
V
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
1600
0
2
5
1
3
4
6
7
8
Collector-emitter voltage, V
ce
- (V)
C
C
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 125
C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
Collector current, I
C
- (A)
S
s
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
c
= 125
°
C,
R
g
= 2.2 Ohms,
V
cc
= 1800V,
C
ge
= 150nF
0
2.0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2.5
3.0
3.5
4.0
4.5
5.0
Gate resistance, R
g
- (ohms)
S
s
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
c
= 125
°
C
I
C
= 800A
V
cc
= 1800V
C
ge
= 150nF
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|---|---|
| DIM800DDS12A000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM800DDS12-A000 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Switch IGBT Module |
| DIM800DDS17A000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM800ECM33F000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM800ECM33-F000 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:IGBT Chopper Module |
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