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參數(shù)資料
| 型號(hào)： | DIM800DDM17-E |
| 英文描述： | IGBT Modules - Dual Switch |
| 中文描述： | IGBT模塊-雙開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 203K |
| 代理商： | DIM800DDM17-E |
DIM800NSM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
0
200
400
600
800
1000
1200
1400
1600
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward voltage, V
F
- (V)
F
F
T
j
= 25
C
T
j
= 125
C
V
F
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
1600
1800
0
500
1000
Collector emitter voltage, V
ce
- (V)
1500
2000
2500
3000
3500
C
C
T
case
= 125C
V
ge
= ±15V
R
g(min)
= 2.2
Module
Chip
0
200
400
600
800
1000
1200
1400
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, V
R
- (V)
R
r
IGBT
Diode
R
i
(C/KW)
τ
i
(ms)
R
i
(C/KW)
τ
i
(ms)
1
0.45
0.13
0.89
0.13
2
2.82
5.80
5.63
5.80
3
3.94
48.03
7.88
48.03
4
4.78
248.53
9.56
248.53
Diode
Transistor
0.1
0.001
1
10
100
T
t
°
C
0.01
1
0.1
10
Pulse width, t
p
- (s)
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| DIM800DDS12A000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
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| DIM800DDS17A000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM800ECM33F000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
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