參數(shù)資料
型號: DM-111A
廠商: Sony Corporation
英文描述: Magneto-Resistance Element
中文描述: 磁電阻元件
文件頁數(shù): 1/7頁
文件大小: 140K
代理商: DM-111A
—1—
E94706A5X-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings
(Ta=25°C)
Supply voltage
Operating temperature
Storage temperature
V
CC
Topr
Tstg
10
V
–40 to +80
–50 to +100
°C
°C
Recommended Operating Condition
5
V
Description
The DM-111A is a highly sensitive magnetic
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
Features
Low power consumption
38μW (Typ.) at V
CC
=5V
Low magnetic field and high sensitivity
75mVp-p (Typ.) at V
CC
=5V
and H=4000A/m
High reliability
Ensured through silicon nitride protective filming
Magneto-Resistance Element
For the availability of this product, please contact the sales office.
M-102 (Plastic)
Electrical Characteristics
(Ta=25°C)
DM-111A
Item
Symbol
R
T
Condition
Min.
500
Typ.
650
Max.
800
Unit
k
Total resistance
Midpoint potential
Output voltage
V
C
V
O
H=4000A/m,
θ
=45°
V
CC
=5V , H=4000A/m
Revoiving magnetic field
V
CC
=5V , H=4000A/m
Revoiving magnetic field
2.47
30
2.50
75
2.53
V
mVp-p
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