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參數(shù)資料
| 型號： | DS1230ABL-100-IND |
| 英文描述： | NVRAM (Battery Based) |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 469K |
| 代理商： | DS1230ABL-100-IND |
DS1230Y/AB
9 of 12
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200 ns for operating current
Input Pulse Levels: 0 - 3.0V
All voltages are referenced to ground
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1230 TTP - SSS - III
Operating Temperature Range
blank: 0
° to 70°
IND: -40
° to +85°C
Access Speed
70:
70 ns
85:
85 ns
100:
100 ns
120:
120 ns
150:
150 ns
200:
200 ns
Package Type
blank: 28-pin 600-mil DIP
P:
34-pin PowerCap Module
VCC Tolerance
AB:
±5%
Y:
±10%
DS1230Y/AB NONVOLATILE SRAM, 28-PIN 740-MIL EXTENDED DIP
MODULE
PKG
28-PIN
DIM
MIN
MAX
A IN.
MM
1.480
37.60
1.500
38.10
B IN.
MM
0.720
18.29
0.740
18.80
C IN.
MM
0.355
9.02
0.375
9.52
D IN.
MM
0.080
2.03
0.110
2.79
E IN.
MM
0.015
0.38
0.025
0.63
F IN.
MM
0.120
3.05
0.160
4.06
G IN.
MM
0.090
2.29
0.110
2.79
H IN.
MM
0.590
14.99
0.630
16.00
J IN.
MM
0.008
0.20
0.012
0.30
K IN.
MM
0.015
0.38
0.021
0.53
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1230ABL-120 | NVRAM (Battery Based) |
| DS1230ABL-120-IND | NVRAM (Battery Based) |
| DS1230ABL-150 | NVRAM (Battery Based) |
| DS1230ABL-150-IND | NVRAM (Battery Based) |
| DS1230ABL-200 | NVRAM (Battery Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1230ABL-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-120-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-150-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
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