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參數(shù)資料
| 型號： | DS1230ABL-100-IND |
| 英文描述： | NVRAM (Battery Based) |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 469K |
| 代理商： | DS1230ABL-100-IND |
DS1230Y/AB
11 of 12
DS1230Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH
POWERCAP
INCHES
PKG
DIM
MIN
NOM
MAX
A
0.920
0.925
0.930
B
0.955
0.960
0.965
C
0.240
0.245
0.250
D
0.052
0.055
0.058
E
0.048
0.050
0.052
F
0.015
0.020
0.025
G
0.020
0.025
0.030
ASSEMBLY AND USE
Reflow soldering
Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented label-side up (live-bug).
Hand soldering and touch-up
Do not touch soldering iron to leads for more than 3 seconds. To solder, apply flux to the pad, heat the
lead frame pad and apply solder. To remove part, apply flux, heat pad until solder reflows, and use a
solder wick.
LPM replacement in a socket
To replace a Low Profile Module in a 68-pin PLCC socket, attach a DS9034PC PowerCap to a module
base then insert the complete module into the socket one row of leads at a time, pushing only on the
corners of the cap. Never apply force to the center of the device. To remove from a socket, use a PLCC
extraction tool and ensure that it does not hit or damage any of the module IC components. Do not use
any other tool for extraction.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1230ABL-120 | NVRAM (Battery Based) |
| DS1230ABL-120-IND | NVRAM (Battery Based) |
| DS1230ABL-150 | NVRAM (Battery Based) |
| DS1230ABL-150-IND | NVRAM (Battery Based) |
| DS1230ABL-200 | NVRAM (Battery Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1230ABL-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-120-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-150-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
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