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參數(shù)資料
| 型號： | DS1230ABL-85-IND |
| 英文描述： | NVRAM (Battery Based) |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 469K |
| 代理商： | DS1230ABL-85-IND |
DS1230Y/AB
3 of 12
PACKAGES
The DS1230 devices are available in two packages: 28-pin DIP and 34-pin PowerCap Module (PCM).
The 28-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a
single package with a JEDEC-standard, 600-mil DIP pinout. The 34-pin PowerCap Module integrates
SRAM memory and nonvolatile control along with contacts for connection to the lithium battery in the
DS9034PC PowerCap. The PowerCap Module package design allows a DS1230 PCM device to be
surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow
soldering. After a DS1230 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the
PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper
attachment. DS1230 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped
in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1230AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1230Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
0.8
V
DC ELECTRICAL
(VCC=5V
± 5% for DS1230AB)
CHARACTERISTICS
(tA: See Note 10) (VCC=5V
± 10% for DS1230Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
A
I/O Leakage Current CE
≥ V
IH
≤ V
CC
IIO
-1.0
+1.0
A
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
200
600
A
Standby Current CE =VCC-0.5V
ICCS2
50
150
A
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1230AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1230Y)
VTP
4.25
4.37
4.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1230ABP-100 | NVRAM (Battery Based) |
| DS1230ABP-120 | NVRAM (Battery Based) |
| DS1230YP-200 | NVRAM (Battery Based) |
| DS1230YP-70 | NVRAM (Battery Based) |
| DS1230YP-85 | NVRAM (Battery Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1230AB-P100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230ABP-100 | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230ABP-100+ | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230AB-P100IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230ABP-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
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