VBAT Trip Point VBTP
參數(shù)資料
型號(hào): DS1314S-2
廠商: Maxim Integrated
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 0K
描述: IC CTRLR NV W/BATT MON 3V 8-SOIC
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 100
控制器類型: 非易失性 RAM
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 管件
其它名稱: DS1314S2
DS1314
6 of 12
VBAT Trip Point
VBTP
2.5
2.6
2.7
V
2
VCC/VBAT Switch Point
(TOL=GND)
VSW
2.6
2.7
2.8
V
2
VCC/VBAT Switch Point
(TOL= VCCO)
VSW
2.4
2.5
2.6
V
2
Output Current @ 2.2V
IOH
-1
mA
8, 11
Output Current @ 0.4V
IOL
4
mA
8, 11
Input Leakage
IIL
-1.0
+1.0
A
Output Leakage
ILO
-1.0
+1.0
A
Battery Monitoring Test Load
RINT
0.8
1.2
1.5
DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI < VBAT; VCCI < VSW)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Battery Current
IBAT
100
nA
3
Battery-Backup Current
ICCO2
500
A
7
Supply Voltage
VCCO
VBAT-0.2
V
2
CEO
Output
VOHL
VBAT-0.2
V
2, 9
CAPACITANCE
(TA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance ( CEI , TOL)
CIN
7
pF
Output Capacitance
( CEO , BW , RST )
COUT
7
pF
AC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C; VCCI ≥ VCCTP)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
CEI
to CEO Propagation Delay
tPD
12
20
ns
CE
Pulse Width
tCE
1.5
s
12
VCC Valid to End of
Write Protection
tREC
12
125
ms
10
VCC Valid to CEI Inactive
tPU
2
ms
VCC Valid to RST Inactive
tRPU
150
200
350
ms
11
VCC Valid to BW Valid
tBPU
1
s
11
AC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C; VCCI < VCCTP)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
VCC Slew Rate
tF
150
s
VCC Fail Detect to RST Active
tRPD
5
15
s
11
VCC Slew Rate
tR
150
s
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