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參數(shù)資料
| 型號： | DS1330Y |
| 英文描述： | 256k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 256k非易失SRAM，帶有電池監(jiān)控器 |
| 文件頁數(shù)： | 10/11頁 |
| 文件大小： | 191K |
| 代理商： | DS1330Y |
DS1330Y/AB
10 of 11
DS1330Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH
POWERCAP
INCHES
PKG
DIM
MIN
NOM
MAX
A
0.920
0.925
0.930
B
0.955
0.960
0.965
C
0.240
0.245
0.250
D
0.052
0.055
0.058
E
0.048
0.050
0.052
F
0.015
0.020
0.025
G
0.020
0.025
0.030
ASSEMBLY AND USE
Reflow soldering
Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented label-side up (live-bug).
Hand soldering and touch-up
Do not touch soldering iron to leads for more than 3 seconds. To solder, apply flux to the pad, heat the
lead frame pad and apply solder. To remove part, apply flux, heat pad until solder reflows, and use a
solder wick.
LPM replacement in a socket
To replace a Low Profile Module in a 68-pin PLCC socket, attach a DS9034PC PowerCap to a module
base then insert the complete module into the socket one row of leads at a time, pushing only on the
corners of the cap. Never apply force to the center of the device. To remove from a socket, use a PLCC
extraction tool and ensure that it does not hit or damage any of the module IC components. Do not use
any other tool for extraction.
相關PDF資料 |
PDF描述 |
|---|---|
| DS1330YP-100 | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330YP-70 | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330YP-70-IND | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330BL-70-IND | NVRAM (Battery Based) |
| DS1330WP-150 | NVRAM (Battery Based) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1330Y/AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330Y_10 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330Y-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1330YL | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256K Nonvolatile SRAM with Battery Monitor |
| DS1330YL-100 | 功能描述:IC NVSRAM 256KBIT 100NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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