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參數(shù)資料
| 型號(hào)： | DS1330Y |
| 英文描述： | 256k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 256k非易失SRAM，帶有電池監(jiān)控器 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 191K |
| 代理商： | DS1330Y |
DS1330Y/AB
7 of 11
POWER-DOWN/POWER-UP TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
V
CC
Fail Detect to
CE
and
WE
Inactive
t
PD
V
CC
slew from V
TP
to 0V
t
F
t
RPD
V
CC
slew from 0V to V
TP
t
R
t
PU
V
CC
Valid to End of Write Protection
t
REC
V
CC
Valid to
RST
Inactive
t
RPU
V
CC
Valid to
BW
Valid
t
BPU
MIN
TYP
MAX
1.5
UNITS
NOTES
11
s
150
s
s
V
CC
Fail Detect to
RST
Active
15
14
150
s
V
CC
Valid to
CE
and
WE
Inactive
2
ms
125
350
ms
ms
150
200
14
1
s
14
BATTERY WARNING TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
Battery Test Cycle
t
BTC
Battery Test Pulse Width
t
BTPW
Battery Test to
BW
Active
t
BW
MIN
TYP
24
MAX
UNITS
hr
s
s
NOTES
1
1
(t
A
= 25 C)
PARAMETER
SYMBOL
Expected Data Retention Time
t
DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WE
is high for a Read Cycle.
2.
OE
= V
IH
or V
IL
. If
OE
= V
IH
during write cycle, the output buffers remain in a high-impedance state.
3.
t
WP
is specified as the logical AND of
CE
and
WE
. t
WP
is measured from the latter of
CE
or
WE
going low to the earlier of
CE
or
WE
going high.
4.
t
DS
is measured from the earlier of
CE
or
WE
going high.
5.
These parameters are sampled with a 5pF load and are not 100% tested.
6.
If the
CE
low transition occurs simultaneously with or latter than the
WE
low transition, the output
buffers remain in a high-impedance state during this period.
7.
If the
CE
high transition occurs prior to or simultaneously with the
WE
high transition, the output
buffers remain in high-impedance state during this period.
8.
If
WE
is low or the
WE
low transition occurs prior to or simultaneously with the
CE
low transition,
the output buffers remain in a high-impedance state during this period.
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| DS1330YP-100 | 256k Nonvolatile SRAM with Battery Monitor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1330Y/AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330Y_10 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330Y-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1330YL | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256K Nonvolatile SRAM with Battery Monitor |
| DS1330YL-100 | 功能描述:IC NVSRAM 256KBIT 100NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁(yè)面:1445 (CN2011-ZH PDF) |
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