參數(shù)資料
型號(hào)： DS1330YP-100
英文描述： 256k Nonvolatile SRAM with Battery Monitor
中文描述： 256k非易失SRAM與電池監(jiān)視器
文件頁(yè)數(shù)： 8/11頁(yè)
文件大?。?/td> 191K
代理商： DS1330YP-100
DS1330Y/AB
8 of 11
9.
Each DS1330 has a built-in switch that disconnects the lithium source until V
CC
is first applied by the
user. The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the time
power is first applied by the user.
10.
All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 C to 70 C. For industrial products (IND), this range is -40 C to
+85 C.
11.
In a power-down condition the voltage on any pin may not exceed the voltage on V
CC
.
12.
t
WR1
and t
DH1
are measured from
WE
going high.
13.
t
WR2
and t
DH2
are measured from
CE
going high.
14.
RST
and
BW
are open drain outputs and cannot source current. External pull-up resistors should be
connected to these pins for proper operation. Both pins will sink 10mA.
DC TEST CONDITIONS
Outputs Open
Cycle = 200ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 – 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
DS1330 TTP - SSS - III
Operating Temperature Range
blank: 0 to 70
IND: -40 to +85 C
Access Speed
70:
70ns
100:
100ns
Package Type
P:
34-pin PowerCap Module
V
CC
Tolerance
AB:
5%
Y:
10%
相關(guān)PDF資料
PDF描述
DS1330YP-70 256k Nonvolatile SRAM with Battery Monitor
DS1330YP-70-IND 256k Nonvolatile SRAM with Battery Monitor
DS1330BL-70-IND NVRAM (Battery Based)
DS1330WP-150 NVRAM (Battery Based)
DS1330YL-100 NVRAM (Battery Based)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1330YP-100+ 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1330YP-100-IND 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor
DS1330YP-70 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1330YP-70+ 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1330YP-70IND 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*