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參數(shù)資料
| 型號(hào)： | DS1345WP-150-IND |
| 英文描述： | 3.3V 1024k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 3.3 1024k非易失SRAM與電池監(jiān)視器 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 249K |
| 代理商： | DS1345WP-150-IND |
DS1345W
2 of 12
READ MODE
The DS1345W executes a read cycle whenever
WE
(Write Enable) is inactive (high) and
CE
(Chip
Enable) and
OE
(Output Enable) are active (low). The unique address specified by the 17 address inputs
(A
0
- A
16
) defines which of the 131,072 bytes of data is to be accessed. Valid data will be available to the
eight data output drivers within t
ACC
(Access Time) after the last address input signal is stable, providing
that
CE
and
OE
(Output Enable) access times are also satisfied. If
OE
and
CE
access times are not
satisfied, then data access must be measured from the later occurring signal (
CE
or
OE
) and the limiting
parameter is either t
CO
for
CE
or t
OE
for
OE
rather than address access.
WRITE MODE
The DS1345W executes a write cycle whenever the
WE
and
CE
signals are in the active (low) state after
address inputs are stable. The later occurring falling edge of
CE
or
WE
will determine the start of the
write cycle. The write cycle is terminated by the earlier rising edge of
CE
or
WE
. All address inputs must
be kept valid throughout the write cycle.
WE
must return to the high state for a minimum recovery time
(t
WR
) before another cycle can be initiated. The
OE
control signal should be kept inactive (high) during
write cycles to avoid bus contention. However, if the output drivers are enabled (
CE
and
OE
active) then
WE
will disable the outputs in t
ODW
from its falling edge.
DATA RETENTION MODE
The DS1345W provides full functional capability for V
CC
greater than 3.0 volts and write protects by 2.8
volts. Data is maintained in the absence of V
CC
without any additional support circuitry. The nonvolatile
static RAMs constantly monitor V
CC
. Should the supply voltage decay, the NV SRAMs automatically
write protect themselves, all inputs become “don’t care,” and all outputs become high impedance. As V
CC
falls below approximately 2.5 volts, the power switching circuit connects the lithium energy source to
RAM to retain data. During power-up, when V
CC
rises above approximately 2.5 volts, the power
switching circuit connects external V
CC
to the RAM and disconnects the lithium energy source. Normal
RAM operation can resume after V
CC
exceeds 3.0 volts.
SYSTEM POWER MONITORING
The DS1345W has the ability to monitor the external V
CC
power supply. When an out-of-tolerance power
supply condition is detected, the NV SRAM warns a processor-based system of impending power failure
by asserting
RST
. On power up,
RST
is held active for 200ms nominal to prevent system operation
during power-on transients and to allow t
REC
to elapse.
RST
has an open-drain output driver.
BATTERY MONITORING
The DS1345W automatically performs periodic battery voltage monitoring on a 24-hour time interval.
Such monitoring begins within t
REC
after V
CC
rises above V
TP
and is suspended when power failure
occurs.
After each 24-hour period has elapsed, the battery is connected to an internal 1M
test resistor for 1
second. During this 1 second, if battery voltage falls below the battery voltage trip point (2.6V), the
battery warning output
BW
is asserted. Once asserted,
BW
remains active until the module is replaced.
The battery is still retested after each V
CC
power-up, however, even if
BW
is active. If the battery voltage
is found to be higher than 2.6V during such testing,
BW
is de-asserted and regular 24-hour testing
resumes.
BW
has an open-drain output driver.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1350AB | 4096k Nonvolatile SRAM with Battery Monitor |
| DS1350ABP-70-IND | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GTS; No. of Contacts:19; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| DS1350AB-100 | M39012 MIL RF CONNECTOR |
| DS1350Y-70 | 4096k Nonvolatile SRAM with Battery Monitor |
| DS1350YP-70-IND | Isolation Transformer Receive |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1345Y | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:1024k Nonvolatile SRAM with Battery Monitor |
| DS1345Y/AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1024k Nonvolatile SRAM with Battery Monitor |
| DS1345Y-70 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:1024k Nonvolatile SRAM with Battery Monitor |
| DS1345YA-100 | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:1024k Nonvolatile SRAM with Battery Monitor |
| DS1345YA-100-IND | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:1024k Nonvolatile SRAM with Battery Monitor |
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