參數(shù)資料
型號： DS1350Y-70
元件分類： DRAM
英文描述： 4096k Nonvolatile SRAM with Battery Monitor
中文描述： 4096k非易失SRAM與電池監(jiān)視器
文件頁數(shù)： 1/12頁
文件大?。?/td> 228K
代理商： DS1350Y-70
1 of 12
111999
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power loss
Power supply monitor resets processor when
V
CC
power loss occurs and holds processor in
reset during V
CC
ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times as fast as 70 ns
Unlimited write cycle endurance
Typical standby current 50
μ
A
Upgrade for 512k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
Full
±
10% V
CC
operating range (DS1350Y)
or optional
±
5% V
CC
operating range
(DS1350AB)
Optional industrial temperature range of
-40
°
C to +85
°
C, designated IND
New PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
SRAM products
-
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A18
DQ0 - DQ7
CE
WE
OE
RST
BW
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Reset Output
- Battery Warning
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as
524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. Additionally, the DS1350 devices have dedicated circuitry for monitoring the
status of V
CC
and the status of the internal lithium battery. DS1350 devices in the PowerCap Module
package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a
complete Nonvolatile SRAM module. The devices can be used in place of 512k x 8 SRAM, EEPROM or
Flash components.
DS1350Y/AB
4096k Nonvolatile SRAM
with Battery Monitor
www.dalsemi.com
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
BW
A15
A16
RST
V
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
33
A17
GND
V
BAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相關(guān)PDF資料
PDF描述
DS1350YP-70-IND Isolation Transformer Receive
DS1350AB-70 4096k Nonvolatile SRAM with Battery Monitor
DS1350Y 4096k Nonvolatile SRAM with Battery Monitor
DS1350BL-100-IND NVRAM (Battery Based)
DS1350BL-70 NVRAM (Battery Based)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1350YL-100 功能描述:IC NVSRAM 4MBIT 100NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
DS1350YL-100-IND 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based)
DS1350YL-70 功能描述:IC NVSRAM 4MBIT 70NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
DS1350YL-70IND 功能描述:IC NVSRAM 4MBIT 70NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
DS1350YL-70-IND 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*