參數(shù)資料
型號(hào): DS1384FP-12
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 9/18頁(yè)
文件大?。?/td> 0K
描述: IC CTRLR RTC WDOG 120NS 44-MQFP
標(biāo)準(zhǔn)包裝: 96
類(lèi)型: 時(shí)鐘/日歷
特點(diǎn): 警報(bào)器,閏年,方波輸出,監(jiān)視計(jì)時(shí)器
存儲(chǔ)容量: 50B
時(shí)間格式: HH:MM:SS:hh(12/24 小時(shí))
數(shù)據(jù)格式: YY-MM-DD-dd
接口: 并聯(lián)
電源電壓: 4.5 V ~ 5.5 V
電壓 - 電源,電池: 2.4 V ~ 4 V
工作溫度: 0°C ~ 70°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 44-QFP
供應(yīng)商設(shè)備封裝: 44-MQFP(10x10)
包裝: 托盤(pán)
其它名稱(chēng): DS1384FP12
DS1384
17 of 18
INTERRUPT OUTPUTS PULSE MODE TIMING DIAGRAM (See Notes 8 and 9)
NOTES:
1) All voltages are referenced to ground.
2) Typical values are at +25
°C and nominal supplies.
3) Outputs are open.
4) Value for voltage and currents is from the VCCI input pin to the VCCO pin.
5) Write protection trip point occurs during power fail prior to switchover from VCC to VBAT.
6) Value for voltage and currents is from the VBAT input pin to the VCCO pin.
7) Data retention time depends on the size of battery selected and the amount of current demanded by
the static RAM in backup mode. The battery capacity (mA
hr) to achieve a tDR of 10 years is given
by the formula: C = (IBAT1 + IRAM) x 24 x 365 x 10, where IRAM is the standby current of the static
RAM at the battery voltage. For the DS1384 chip alone, a standard 48mAh lithium cell battery will
provide greater than 10 years of data retention in the absence of power.
8) Applies to both interrupt pins when the alarms are set to pulse.
9) Interrupt output occurs within 100ns of the alarm condition existing.
OUTPUT LOAD
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