參數(shù)資料
型號(hào): DS1501YZN+T&R
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 16/22頁(yè)
文件大?。?/td> 0K
描述: IC RTC WDOG Y2KC 5.0V 28-SOIC
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 1,000
類型: 時(shí)鐘/日歷
特點(diǎn): 警報(bào)器,閏年,NVSRAM,方波輸出,監(jiān)視計(jì)時(shí)器,Y2K
存儲(chǔ)容量: 256B
時(shí)間格式: HH:MM:SS(24 小時(shí))
數(shù)據(jù)格式: YY-MM-DD-dd
接口: 并聯(lián)
電源電壓: 4.5 V ~ 5.5 V
電壓 - 電源,電池: 2.5 V ~ 3.7 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 28-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 28-SOIC W
包裝: 帶卷 (TR)
DS1501/DS1511 Y2KC Watchdog Real-Time Clocks
3 of 22
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Battery Switchover Voltage (Notes 3, 6)
VSO
VBAT,
VBAUX,
or VPF
V
Battery Leakage Current
ILKG
100
nA
DC ELECTRICAL CHARACTERISTICS
(DS1511: VCC = 0V; TA = 0°C to +70°C; DS1501: VCC = 0V, TA = -40°C to +85°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Battery Current, BB32 = 0, EOSC = 0
IBAT1
(Note 7)
0.27
1.0
A
Battery Current, BB32 = 0, EOSC = 1
IBAT2
(Note 7)
0.01
0.1
A
VBAUX Current BB32 = 1, SQW Open
IBAUX
(Note 7)
2
A
CRYSTAL SPECIFICATIONS*
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Nominal Frequency
fO
32.768
kHz
Series Resistance
ESR
45
k
Load Capacitance
CL
6/12.5
pF
*The crystal, traces, and crystal input pins should be isolated from RF generating signals. Refer to Application Note 58: Crystal Considerations
for Dallas Real-Time Clocks for additional specifications.
AC OPERATING CHARACTERISTICS
(DS1511: VCC = 5V ±10%, TA = 0°C to +70°C; DS1501: VCC = 5V ±10%, TA = -40°C to +85°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Read Cycle Time
tRC
70
ns
Address Access Time
tAA
70
ns
CE to DQ Low-Z
tCEL
(Note 8)
5
ns
CE Access Time
tCEA
70
ns
CE Data-Off Time
tCEZ
(Note 8)
25
ns
OE to DQ Low-Z (0°C to +85°C)
tOEL
(Note 8)
5
ns
OE to DQ Low-Z (-40°C to 0°C)
tOEL
(Note 8)
2
ns
OE Access Time
tOEA
35
ns
OE Data-Off Time
tOEZ
(Note 8)
25
ns
Output Hold from Address
tOH
5
ns
Write Cycle Time
tWC
70
ns
Address Setup Time
tAS
0
ns
WE Pulse Width
tWEW
50
ns
CE Pulse Width
tCEW
55
ns
Data Setup Time
tDS
30
ns
Data Hold Time
tDH
5
ns
Address Hold Time
tAH
0
ns
WE Data-Off Time
tWEZ
(Note 8)
25
ns
Write Recovery Time
tWR
15
ns
Pulse Width, OE, WE, or CE High
PWHIGH
20
ns
Pulse Width, OE, WE, or CE Low
PWLOW
70
ns
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