DS1557 4Meg, Nonvolatile, Y2K-Compliant Timekeeping RAM
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Figure 1. Block Diagram
Table 1. Operating Modes
VCC
CE
OE
WE
DQ0–DQ7
MODE
POWER
VIH
X
HIGH-Z
Deselect
Standby
VIL
X
VIL
DIN
Write
Active
VIL
VIH
DOUT
Read
Active
VCC > VPF
VIL
VIH
HIGH-Z
Read
Active
VSO < VCC <VPF
X
HIGH-Z
Deselect
CMOS Standby
VCC < VSO <VPF
X
HIGH-Z
Data Retention
Battery Current
DATA READ MODE
The DS1557 is in the read mode whenever
CE (chip enable) is low and WE (write enable) is high. The
device architecture allows ripple-through access to any valid address location. Valid data will be available
at the DQ pins within tAA after the last address input is stable, providing that CE and OE access times are
satisfied. If
CE or OE access times are not met, valid data will be available at the latter of chip enable
access (tCEA) or at output enable access time (tOEA). The state of the data input/output pins (DQ) is
controlled by
CE and OE . If the outputs are activated before t
AA, the data lines are driven to an
intermediate state until tAA. If the address inputs are changed while CE and OE remain valid, output data
will remain valid for output data hold time (tOH) but will then go indeterminate until the next address
access.
Maxim
DS1557