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參數(shù)資料
| 型號： | DS2761 |
| 英文描述： | High-Precision Li+ Battery Monitor |
| 中文描述： | 高精度、Li+電池監(jiān)視器 |
| 文件頁數(shù)： | 11/24頁 |
| 文件大小： | 286K |
| 代理商： | DS2761 |
DS2761
11 of 24
MEMORY
The DS2761 has a 256-byte linear address space with registers for instrumentation, status, and control in
the lower 32 bytes, with lockable EEPROM and SRAM memory occupying portions of the remaining
address space. All EEPROM and SRAM memory is general purpose except addresses 30h, 31h, and 33h,
which should be written with the default values for the protection register, status register, and current
offset register, respectively. When the MSB of any two-byte register is read, both the MSB and LSB are
latched and held for the duration of the read data command to prevent updates during the read and ensure
synchronization between the two register bytes. For consistent results, always read the MSB and the LSB
of a two-byte register during the same read data command sequence.
EEPROM memory is shadowed by RAM to eliminate programming delays between writes and to allow
the data to be verified by the host system before being copied to EEPROM. All reads and writes to/from
EEPROM memory actually access the shadow RAM. In unlocked EEPROM blocks, the write data
command updates shadow RAM. In locked EEPROM blocks, the write data command is ignored. The
copy data command copies the contents of shadow RAM to EEPROM in an unlocked block of EEPROM
but has no effect on locked blocks. The recall data command copies the contents of a block of EEPROM
to shadow RAM regardless of whether the block is locked or not.
Table 3.
MEMORY MAP
ADDRESS (HEX)
00
01
02–06
07
08
09–0B
0C
0D
0E
0F
10
11
12–17
18
19
1A–1F
20–2F
30–3F
40–7F
80–8F
90–FF
*
Each EEPROM block is read/write until locked by the LOCK command, after which it is read-only.
DESCRIPTION
READ/WRITE
R/W
R
Protection Register
Status Register
Reserved
EEPROM Register
Special Feature Register
Reserved
Voltage Register MSB
Voltage Register LSB
Current Register MSB
Current Register LSB
Accumulated Current Register MSB
Accumulated Current Register LSB
Reserved
Temperature Register MSB
Temperature Register LSB
Reserved
EEPROM, block 0
EEPROM, block 1
Reserved
SRAM
Reserved
R/W
R/W
R
R
R
R
R/W
R/W
R
R
R/W*
R/W*
R/W
相關PDF資料 |
PDF描述 |
|---|---|
| DS2761AE | High-Precision Li+ Battery Monitor |
| DS2761AX | High-Precision Li+ Battery Monitor |
| DS2761BE | High-Precision Li+ Battery Monitor |
| DS2761BX-025 | High-Precision Li+ Battery Monitor |
| DS276S | Low Power Transceiver Chip |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS2761AE | 功能描述:IC MON BATT LI-ION HP 16-TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 電池管理 系列:- 標準包裝:1 系列:- 功能:充電管理 電池化學:鋰離子（Li-Ion）、鋰聚合物（Li-Pol） 電源電壓:3.75 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應商設備封裝:SOT-23-5 包裝:剪切帶 (CT) 產品目錄頁面:669 (CN2011-ZH PDF) 其它名稱:MCP73831T-2ACI/OTCT |
| DS2761AE+ | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| DS2761AE+025 | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| DS2761AE+025/T&R | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述:IC MON BATT LI-ION HP 16-TSSOP |
| DS2761AE+025/T&R | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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