參數(shù)資料
型號(hào)： DSPIC30F2011-20I/SO
廠商： Microchip Technology
文件頁數(shù)： 13/66頁
文件大小： 0K
描述： IC DSPIC MCU/DSP 12K 18SOIC
產(chǎn)品培訓(xùn)模塊： Serial Communications using dsPIC30F I2C
Serial Communications using dsPIC30F SPI
Serial Communications using dsPIC30F UART
dsPIC30F 12 bit ADC - Part 2
dsPIC30F Addressing Modes - Part 1
dsPIC30F Architecture - Part 1
dsPIC30F DSP Engine & ALU
dsPIC30F Interrupts
dsPIC30F Motor Control PWM
dsPIC Timers
Asynchronous Stimulus
dsPIC30F Addressing Modes - Part 2
dsPIC30F Architecture - Part 2
dsPIC30F 12-bit ADC Part 1
標(biāo)準(zhǔn)包裝： 42
系列： dsPIC™ 30F
核心處理器： dsPIC
芯體尺寸： 16-位
速度： 20 MIPS
連通性： I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測(cè)/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 12
程序存儲(chǔ)器容量： 12KB（4K x 24）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 1K x 8
電壓 - 電源 (Vcc/Vdd)： 2.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 18-SOIC（0.295"，7.50mm 寬）
包裝： 管件
配用： XLT18SO-1-ND - SOCKET TRANSITION 18SOIC 300MIL
AC30F005-ND - MODULE SCKT DSPIC30F 18DIP/SOIC
其它名稱： DSPIC30F201120ISO
dsPIC30F Flash Programming Specification
DS70102K-page 20
2010 Microchip Technology Inc.
6.0
OTHER PROGRAMMING
FEATURES
6.1
Erasing Memory
Memory is erased by using an ERASEB, ERASED or
ERASEP command, as detailed in Section 8.5
erased by row using ERASEP. Data EEPROM can be
erased by row using ERASED. When memory is erased,
the affected memory locations are set to ‘1’s.
ERASEB provides several Bulk Erase options.
Performing a Chip Erase with the ERASEB command
clears all code memory, data EEPROM and code
protection registers. Alternatively, ERASEB can be used
to selectively erase either all code memory or data
EEPROM. Erase options are summarized in Table 6-1.
TABLE 6-1:
ERASE OPTIONS
Command
Affected Region
ERASEB
Entire chip(1) or all code memory or all
data EEPROM, or erase by segment
ERASED
Specified rows of data EEPROM
ERASEP(2)
Specified rows of code memory
Note 1: The system operation Configuration
registers and device ID registers are not
erasable.
2: ERASEP cannot be used to erase code-
protect Configuration bits. These bits must
be erased using ERASEB.
6.2
Modifying Memory
Instead
of
bulk-erasing
the
device
before
programming, it is possible that you may want to modify
only a section of an already programmed device. In this
situation, Chip Erase is not a realistic option.
Instead, you can erase selective rows of code memory
and data EEPROM using ERASEP and ERASED,
respectively. You can then reprogram the modified
rows with the PROGP and PROGD command pairs. In
these cases, when code memory is programmed,
single-panel programming must be specified in the
PROGP command.
For modification of Advanced Code Protection bits for
a particular segment, the entire chip must first be
erased with the ERASEB command. Alternatively, on
devices that support Advanced Security, individual
segments (code and/or data EEPROM) may be
erased, by suitably changing the MS (Memory Select)
field in the ERASEB command. The code-protect
Configuration bits can then be reprogrammed using the
PROGC command.
Note:
If read or write code protection is enabled
for a segment, no modifications can be
made to that segment until code
protection is disabled. Code protection
can only be disabled by performing a Chip
Erase or by performing a Segment Erase
operation for the required segment.
6.3
Reading Memory
The READD command reads the data EEPROM,
Configuration bits and device ID of the device. This
command only returns 16-bit data and operates on
16-bit registers. READD can be used to return the
entire contents of data EEPROM.
The READP command reads the code memory of the
device. This command only returns 24-bit data packed
READP can be used to read up to 32K instruction words
of code memory.
Note:
Reading an unimplemented memory
location
causes
the
programming
executive to reset. All READD and READP
commands must specify only valid
memory locations.
6.4
Programming Executive Software
Version
At times, it may be necessary to determine the version
of programming executive stored in executive memory.
The QVER command performs this function. See
about this command.
6.5
Data EEPROM Information in the
Hexadecimal File
To allow portability of code, the programmer must read
the data EEPROM information from the hexadecimal
file. If data EEPROM information is not present, a
simple warning message should be issued by the
programmer. Similarly, when saving a hexadecimal file,
all data EEPROM information must be included. An
option to not include the data EEPROM information can
be provided.
Microchip Technology Inc. believes that this feature is
important for the benefit of the end customer.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
dsPIC30F2011-30I/ML 功能描述:數(shù)字信號(hào)處理器和控制器 - DSP, DSC 28LD 30MIPS 12 KB RoHS:否 制造商:Microchip Technology 核心:dsPIC 數(shù)據(jù)總線寬度:16 bit 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:2 KB 最大時(shí)鐘頻率:40 MHz 可編程輸入/輸出端數(shù)量:35 定時(shí)器數(shù)量:3 設(shè)備每秒兆指令數(shù):50 MIPs 工作電源電壓:3.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-44 安裝風(fēng)格:SMD/SMT
dsPIC30F2011-30I/P 功能描述:數(shù)字信號(hào)處理器和控制器 - DSP, DSC 18LD 30MIPS 12 KB RoHS:否 制造商:Microchip Technology 核心:dsPIC 數(shù)據(jù)總線寬度:16 bit 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:2 KB 最大時(shí)鐘頻率:40 MHz 可編程輸入/輸出端數(shù)量:35 定時(shí)器數(shù)量:3 設(shè)備每秒兆指令數(shù):50 MIPs 工作電源電壓:3.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-44 安裝風(fēng)格:SMD/SMT
DSPIC30F2011-30I/P 制造商:Microchip Technology Inc 功能描述:16- Bit Digital Signal Controller
dsPIC30F2011-30I/SO 功能描述:數(shù)字信號(hào)處理器和控制器 - DSP, DSC 18LD 30MIPS 12 KB RoHS:否 制造商:Microchip Technology 核心:dsPIC 數(shù)據(jù)總線寬度:16 bit 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:2 KB 最大時(shí)鐘頻率:40 MHz 可編程輸入/輸出端數(shù)量:35 定時(shí)器數(shù)量:3 設(shè)備每秒兆指令數(shù):50 MIPs 工作電源電壓:3.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-44 安裝風(fēng)格:SMD/SMT
DSPIC30F2011-30I/SO 制造商:Microchip Technology Inc 功能描述:16- Bit Digital Signal Controller
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