參數(shù)資料
型號(hào): DSPIC30F2020-30I/MM
廠商: Microchip Technology
文件頁數(shù): 36/66頁
文件大?。?/td> 0K
描述: IC DSPIC MCU/DSP 12K 28QFN
產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
特色產(chǎn)品: SMPS & Digital Power Conversion Solutions
標(biāo)準(zhǔn)包裝: 61
系列: dsPIC™ 30F
核心處理器: dsPIC
芯體尺寸: 16-位
速度: 30 MIP
連通性: I²C,IrDA,LIN,SPI,UART/USART
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 21
程序存儲(chǔ)器容量: 12KB(4K x 24)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 512 x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 28-VQFN 裸露焊盤
包裝: 管件
產(chǎn)品目錄頁面: 650 (CN2011-ZH PDF)
配用: DM300023-ND - KIT DEMO DSPICDEM SMPS BUCK
AC164322-ND - MODULE SOCKET MPLAB PM3 28/44QFN
DV164005-ND - KIT ICD2 SIMPLE SUIT W/USB CABLE
2010 Microchip Technology Inc.
DS70102K-page 41
dsPIC30F Flash Programming Specification
Step 6: Update the row address stored in NVMADRU:NVMADR. When W6 rolls over to 0x0, NVMADRU must be
incremented.
0000
430307
AF0042
EC2764
883B16
ADD
W6, W7, W6
BTSC
SR, #C
INC
NVMADRU
MOV
W6, NVMADR
Step 7: Reset device internal PC.
0000
040100
000000
GOTO 0x100
NOP
Step 8: Repeat Steps 3-7 until all rows of code memory are erased.
Step 9: Initialize NVMADR and NVMADRU to erase executive memory and initialize W7 for row address updates.
0000
EB0300
883B16
200807
883B27
200407
CLR
W6
MOV
W6, NVMADR
MOV
#0x80, W7
MOV
W7, NVMADRU
MOV
#0x40, W7
Step 10: Set NVMCON to erase 1 row of executive memory.
0000
24071A
883B0A
MOV
#0x4071, W10
MOV
W10, NVMCON
Step 11: Unlock the NVMCON to erase 1 row of executive memory.
0000
200558
883B38
200AA9
883B39
MOV
#0x55, W8
MOV
W8, NVMKEY
MOV
#0xAA, W9
MOV
W9, NVMKEY
Step 12: Initiate the erase cycle.
0000
0000
A8E761
000000
000000
A9E761
000000
BSET NVMCON, #WR
NOP
Externally time ‘P13a’ ms (see Section 13.0 “AC/DC Characteristics and
NOP
BCLR NVMCON, #WR
NOP
Step 13: Update the row address stored in NVMADR.
0000
430307
883B16
ADD
W6, W7, W6
MOV
W6, NVMADR
Step 14: Reset device internal PC.
0000
040100
000000
GOTO 0x100
NOP
Step 15: Repeat Steps 10-14 until all 24 rows of executive memory are erased.
Step 16: Initialize NVMADR and NVMADRU to erase data memory and initialize W7 for row address updates.
0000
2XXXX6
883B16
2007F6
883B16
200207
MOV
#<lower 16-bits of starting Data EEPROM address>, W6
MOV
W6, NVMADR
MOV
#0x7F, W6
MOV
W6, NVMADRU
MOV
#0x20, W7
Step 17: Set NVMCON to erase 1 row of data memory.
0000
24075A
883B0A
MOV
#0x4075, W10
MOV
W10, NVMCON
TABLE 11-5:
SERIAL INSTRUCTION EXECUTION FOR ERASING PROGRAM MEMORY
(EITHER IN LOW-VOLTAGE OR NORMAL-VOLTAGE SYSTEMS) (CONTINUED)
Command
(Binary)
Data
(Hexadecimal)
Description
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