參數(shù)資料
型號: DT28F016SA-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
中文描述: 1M X 16 FLASH 12V PROM, 150 ns, PDSO56
封裝: 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56
文件頁數(shù): 19/63頁
文件大?。?/td> 635K
代理商: DT28F016SA-150
E
4.4 28F016SV
—Performance Enhancement Command Bus Definitions
28F016SV FlashFile MEMORY
19
Command
Mode
Notes
First Bus Cycle
Second Bus Cycle
Third Bus Cycle
Oper
Addr
Data
(13)
Oper
Addr
Data
(13)
Oper
Addr
Data
Read Extended
Status Register
1
Write
X
xx71H
Read
RA
GSRD
BSRD
Page Buffer Swap
7
Write
X
xx72H
Read Page Buffer
Write
X
xx75H
Read
PBA
PD
Single Load to Page
Buffer
Write
X
xx74H
Write
PBA
PD
Sequential Load to
Page Buffer
x8
4,6,10
Write
X
xxE0H
Write
X
BCL
Write
X
BCH
x16
4,5,6,10
Write
X
xxE0H
Write
X
WCL
Write
X
WCH
Page Buffer Write to
Flash
x8
3,4,9,10
Write
X
xx0CH
Write
A0
BC(L,H)
Write
PA
BC(H,L)
x16
4,5,10
Write
X
xx0CH
Write
X
WCL
Write
PA
WCH
Two-Byte Program
x8
3
Write
X
xxFBH
Write
A0
WD(L,H)
Write
PA
WD(H,L)
Lock Block/Confirm
Write
X
xx77H
Write
BA
xxD0H
Upload Status
Bits/Confirm
2
Write
X
xx97H
Write
X
xxD0H
Upload Device
Information/Confirm
11
Write
X
xx99H
Write
X
xxD0H
Erase All Unlocked
Blocks/Confirm
Write
X
xxA7H
Write
X
xxD0H
RY/BY# Enable to
Level-Mode
8
Write
X
xx96H
Write
X
xx01H
RY/BY#
Pulse-On-Write
8
Write
X
xx96H
Write
X
xx02H
RY/BY#
Pulse-On-Erase
8
Write
X
xx96H
Write
X
xx03H
RY/BY# Disable
8
Write
X
xx96H
Write
X
xx04H
RY/BY# Pulse-On-
Write/Erase
8
Write
X
xx96H
Write
X
xx05H
Sleep
12
Write
X
xxF0H
Abort
Write
X
xx80H
ADDRESS
BA = Block Address
PBA = Page Buffer Address
RA = Extended Register Address
PA = Program Address
X = Don’t Care
DATA
AD = Array Data
PD = Page Buffer Data
BSRD = BSR Data
GSRD = GSR Data
WC (L,H) = Word Count (Low, High)
BC (L,H) = Byte Count (Low, High)
WD (L,H) = Write Data (Low, High)
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參數(shù)描述
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