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參數(shù)資料
| 型號： | DT28F016SV-100 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 中文描述： | 1M X 16 FLASH 5V PROM, 100 ns, PDSO56 |
| 封裝： | 23.70 X 16 MM, SSOP-56 |
| 文件頁數(shù)： | 17/63頁 |
| 文件大?。?/td> | 635K |
| 代理商： | DT28F016SV-100 |
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E
4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
28F016SV FlashFile MEMORY
17
4.1 Bus Operations for Word-Wide Mode (BYTE# = V
IH
)
Mode
Notes
RP#
CE
1
#
CE
0
#
OE#
WE#
A
1
DQ
0
–15
RY/BY#
Read
1,2,7
V
IH
V
IL
V
IL
V
IL
V
IH
X
D
OUT
X
Output Disable
1,6,7
V
IH
V
IL
V
IL
V
IH
V
IH
X
High Z
X
Standby
1,6,7
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
V
IH
X
X
X
High Z
X
Deep Power-Down
1,3
V
IL
X
X
X
X
X
High Z
V
OH
Manufacturer ID
4
V
IH
V
IL
V
IL
V
IL
V
IH
V
IL
0089H
V
OH
Device ID
4,8
V
IH
V
IL
V
IL
V
IL
V
IH
V
IH
66A0H
V
OH
Write
1,5,6
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
4.2 Bus Operations for Byte-Wide Mode (BYTE# = V
IL
)
Mode
Notes
RP#
CE
1
#
CE
0
#
OE#
WE#
A
0
DQ
0–7
RY/BY#
Read
1,2,7
V
IH
V
IL
V
IL
V
IL
V
IH
X
D
OUT
X
Output Disable
1,6,7
V
IH
V
IL
V
IL
V
IH
V
IH
X
High Z
X
Standby
1,6,7
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
V
IH
X
X
X
High Z
X
Deep Power-Down
1,3
V
IL
X
X
X
X
X
High Z
V
OH
Manufacturer ID
4
V
IH
V
IL
V
IL
V
IL
V
IH
V
IL
89H
V
OH
Device ID
4,8
V
IH
V
IL
V
IL
V
IL
V
IH
V
IH
A0H
V
OH
Write
1,5,6
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
NOTES:
1.
2.
X can be V
IH
or V
IL
for address or control pins except for RY/BY#, which is either V
OL
or V
OH
.
RY/BY# output is open drain. When the WSM is ready, Erase is suspended or the device is in deep power-down mode.
RY/BY# will be at V
OH
if it is tied to V
CC
through a resistor. RY/BY# at V
OH
is independent of OE# while a WSM operation
is in progress.
RP# at GND ± 0.2V ensures the lowest deep power-down current.
A
and A
at V
provide device manufacturer codes in x8 and x16 modes respectively. A
0
and A
1
at V
IH
provide device ID
codes in x8 and x16 modes respectively. All other addresses are set to zero.
Commands for erase, data program, or lock-block operations can only be completed successfully when V
PP
= V
PPH1
or
V
PP
= V
PPH2
.
While the WSM is running, RY/BY# in level-mode (default) stays at V
OL
until all operations are complete. RY/BY# goes to
V
OH
when the WSM is not busy or in erase suspend mode.
RY/BY# may be at V
OL
while the WSM is busy performing various operations (for example, a Status Register read during a
program operation).
The 28F016SV shares an identical device identifier (66A0H in word-wide mode, A0H in byte-wide mode) with the
28F016SA. See application note
AP-393 28F016SV Compatibility with 28F016SA
for software and hardware techniques to
differentiate between the 28F016SV and 28F016SA.
3.
4.
5.
6.
7.
8.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DT28F016SA-100 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DT28F016SA-150 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DT28F160F3B120 | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F160F3B95 | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F160F3T120 | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DT28F160 | 制造商:Intel 功能描述: |
| DT28F160F3B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F160F3B95 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F160F3T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F160F3T95 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
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