參數(shù)資料
型號： DT28F016SV-100
廠商： INTEL CORP
元件分類： DRAM
英文描述： 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
中文描述： 1M X 16 FLASH 5V PROM, 100 ns, PDSO56
封裝： 23.70 X 16 MM, SSOP-56
文件頁數(shù)： 4/63頁
文件大小： 635K
代理商： DT28F016SV-100
28F016SV FlashFile MEMORY
E
4
REVISION HISTORY
Number
Description
-001
Original Version
-002
Added 28F016SV-065/-070 at 5V V
CC
and 28F016SV-075 at 3.3V V
CC
.
Improved burst write transfer rate to 30.8 MB/sec.
Added 56-lead SSOP Type I packaging information.
Changed V
PPLK
from 2V to 1.5V.
Increased I
CCR
at 5V V
and 3.3V V
CC
:
I
CCR1
from 30 mA (typ)/35 mA (max) to 40 mA (typ)/50 mA (max) @ V
CC
= 3.3V
I
CCR2
from 15 mA (typ)/20 mA (max) to 20 mA (typ)/30 mA (max) @ V
CC
= 3.3V
I
CCR1
from 50 mA (typ)/60 mA (max) to 75 mA (typ)/95 mA (max) @ V
CC
= 5V
I
CCR2
from 30 mA (typ)/35 mA (max) to 45 mA (typ)/55 mA (max) @ V
CC
= 5V
Moved AC Characteristics for Extended Register Reads into separate table.
Increased V
PP
MAX from 13V to 14V.
Added Erase Suspend Command Latency times to Section 5.12
Modified Device Nomenclature Section to include SSOP package option and Ordering
Information
Changed definition of
“NC.” Removed “No internal connection to die” from description.
Added “
xx
” to Upper Byte of Command (Data) Definition in Sections 4.3 and 4.4.
Added Note to Sleep Command (Section 4.4) denoting that the chip must be de-selected
in order for the power consumption in sleep mode to reach deep power-down
levels.
Modified parameters “V” and “I” of Section 5.1 to apply to “NC” pins.
Increased I
PPR
(V
PP
Read Current) for V
PP
> V
CC
to 200 μA at V
CC
= 3.3V and V
CC
=
5V
Changed V
=
5V
DC Characteristics (Section 5.5) marked with Note 1 to indicate
that these currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns
and a TTL rise/fall time of <10 ns.
Corrected the graphical representation of t
WHGL
and t
EHGL
in Figures 15 and 16.
Increased Typical “Page Buffer Byte/Word Program Times” from 6.0 μs to 8.0 μs (Byte)
and 12.1 μs to 16.0 μs (Word) @ V
CC
= 3.3V/
5V
and V
PP
=
5V
:
Increased Typ. “Byte/Word Program Times” (t
WHRH1A
/t
WHRH1B
) for V
PP
=
5V
(Section
5.12)
t
WHRH1A
from 16.5 μs to 29.0 μs and t
WHRH1B
from 24.0 μs to 35.0 μs at V
CC
=3.3V
t
WHRH1A
from 11.0 μs to 20.0 μs and t
WHRH1B
from 16.0 μs to 25.0 μs at V
CC
=
5V
Increased Typical “Block Program Times” (t
WHRH2
/t
WHRH3
)for V
=
5V
(Section 5.12):
t
WHRH2
from 1.1 sec to 1.9 sec and t
WHRH3
from 0.8 sec to 1.2 sec at V
CC
= 3.3V
t
WHRH2
from 0.8 sec to 1.4 sec and t
WHRH3
from 0.6 sec to 0.85 sec at V
CC
=
5V
Changed “Time from Erase Suspend Command to WSM Ready” spec name to “Erase
Suspend Latency Time to Read;” modified typical values and added Min/Max
values at V
CC
=3.3/
5V
and V
PP
=5V/12V (Section 5.12)
Added “Erase Suspend Latency Time to Program” Specifications to Section 5.12
Minor cosmetic changes throughout document
-003
相關(guān)PDF資料
PDF描述
DT28F016SA-100 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DT28F016SA-150 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DT28F160F3B120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3B95 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DT28F160 制造商:Intel 功能描述:
DT28F160F3B120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3B95 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T95 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
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