| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IPI110N20N3 G | Infineon Technologies | MOSFET N-CH 200V 88A TO262-3 | 0 | 1:$8.06000 10:$7.25400 25:$6.60960 100:$5.96460 250:$5.48096 500:$4.99736 1,000:$4.35254 2,500:$4.19133 5,000:$4.03013 |
| IPI041N12N3 G | Infineon Technologies | MOSFET N-CH 120V 120A TO262-3 | 0 | 1:$6.94000 10:$6.20000 25:$5.58000 100:$5.08400 250:$4.58800 500:$4.11680 1,000:$3.47200 2,500:$3.29840 5,000:$3.16200 |
| IPW65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO247 | 0 | 1:$6.04000 10:$5.39600 100:$4.42450 250:$3.99284 500:$3.58278 1,000:$3.02162 2,500:$2.87054 5,000:$2.75183 10,000:$2.67629 |
| IPW65R080CFD | Infineon Technologies | MOSFET N-CH 700V 43.3A TO247 | 0 | 240:$10.28875 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 88A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 11 毫歐 @ 88A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 270µA |
| 閘電荷(Qg) @ Vgs: | 87nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 7100pF @ 100V |
| 功率 - 最大: | 300W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-262-3，長引線，I²Pak，TO-262AA |
| 供應(yīng)商設(shè)備封裝: | PG-TO262-3 |
| 包裝: | 管件 |