| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SUD50N06-08H-E3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$1.71570 |
| IRLZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | 0 | 1,000:$0.90045 |
| SI2333DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V SOT23-3 | 0 | 3,000:$0.22475 |
| SQD25N06-22L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V 25A TO252 | 0 | 2,000:$0.89100 |
| SIE862DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$0.89100 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3419EEV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 7.4A 6TSOP | 0 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 93A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 7.8 毫歐 @ 20A，10V |
| Id 時的 Vgs(th)（最大）: | 4.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 145nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 7000pF @ 25V |
| 功率 - 最大: | 3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | TO-252，（D-Pak） |
| 包裝: | 帶卷 (TR) |