| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4412ADY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
| SI4456DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 33A 8-SOIC | 0 | 2,500:$0.96930 |
| SI4410BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 1:$0.77000 25:$0.59680 100:$0.52650 250:$0.45632 500:$0.38610 1,000:$0.30713 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 1:$0.77000 25:$0.59680 100:$0.52650 250:$0.45632 500:$0.38610 1,000:$0.30713 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 3,000:$0.25448 6,000:$0.23693 15,000:$0.22815 30,000:$0.21938 75,000:$0.21587 150,000:$0.21060 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 24 毫歐 @ 8A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 20nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |