| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI3442CDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V D-S 6TSOP | 75 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SI3442CDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V D-S 6TSOP | 0 | 3,000:$0.13950 6,000:$0.13050 15,000:$0.12150 30,000:$0.11475 75,000:$0.11250 150,000:$0.10800 |
| SIA418DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A SC70-6 | 0 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| IRF9Z24STRRPBF | Vishay Siliconix | MOSFET P-CH 60V 11A D2PAK | 0 | 800:$0.79514 |
| SI7404DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 1212-8 | 0 | 3,000:$0.76950 |
| SI7846DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 150V PPAK 8SOIC | 0 | 3,000:$0.79110 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 8A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 27 毫歐 @ 6.5A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 14nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 335pF @ 10V |
| 功率 - 最大: | 2.7W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSOP（0.065"，1.65mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 6-TSOP |
| 包裝: | 剪切帶 (CT) |