分離式半導體產(chǎn)品 SIA431DJ-T1-GE3品牌、價格、PDF參數(shù)

SIA431DJ-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
SIA431DJ-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V PPAK SC70-6L 2,780 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SIA431DJ-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V PPAK SC70-6L 0 3,000:$0.21750
6,000:$0.20250
15,000:$0.19500
30,000:$0.18750
SI4418DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 200V 8-SOIC 5,058 1:$1.57000
25:$1.23920
100:$1.11510
250:$0.97056
500:$0.86730
1,000:$0.68145
SI4418DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 200V 8-SOIC 5,058 1:$1.57000
25:$1.23920
100:$1.11510
250:$0.97056
500:$0.86730
1,000:$0.68145
SI4418DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 200V 8-SOIC 5,000 2,500:$0.65467
SIS892DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 1212-8 PPAK 3,000 3,000:$0.64400
6,000:$0.61180
15,000:$0.58650
30,000:$0.57040
75,000:$0.55200
SI4464DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 200V 8-SOIC 443 1:$1.14000
25:$0.89720
100:$0.80730
250:$0.70264
500:$0.62790
1,000:$0.49335
SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 1212-8 PPAK 4,170 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 1212-8 PPAK 4,170 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI7621DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 3,000 1:$0.73000
25:$0.56120
100:$0.49500
250:$0.42900
500:$0.36300
1,000:$0.28875
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 5,184 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 2,500 2,500:$0.37800
5,000:$0.35910
12,500:$0.34425
25,000:$0.33480
62,500:$0.32400
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SIA431DJ-T1-GE3 • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET P 通道,金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 20V
電流 - 連續(xù)漏極(Id) @ 25° C: 12A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 25 毫歐 @ 6.5A,4.5V
Id 時的 Vgs(th)(最大): 850mV @ 250µA
閘電荷(Qg) @ Vgs: 60nC @ 8V
輸入電容 (Ciss) @ Vds: 1700pF @ 10V
功率 - 最大: 19W
安裝類型: 表面貼裝
封裝/外殼: PowerPAK? SC-70-6
供應商設備封裝: PowerPAK? SC-70-6 單
包裝: Digi-Reel®