分離式半導體產品 SI7119DN-T1-GE3品牌、價格、PDF參數

SI7119DN-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數量 價格
SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 1212-8 PPAK 4,170 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 1212-8 PPAK 4,170 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI7621DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 3,000 1:$0.73000
25:$0.56120
100:$0.49500
250:$0.42900
500:$0.36300
1,000:$0.28875
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 5,184 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 2,500 2,500:$0.37800
5,000:$0.35910
12,500:$0.34425
25,000:$0.33480
62,500:$0.32400
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI7119DN-T1-GE3 • PDF參數
類別: 分離式半導體產品
FET 型: MOSFET P 通道,金屬氧化物
FET 特點: 標準
漏極至源極電壓(Vdss): 200V
電流 - 連續(xù)漏極(Id) @ 25° C: 3.8A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 1.05 歐姆 @ 1A,10V
Id 時的 Vgs(th)(最大): 4V @ 250µA
閘電荷(Qg) @ Vgs: 25nC @ 10V
輸入電容 (Ciss) @ Vds: 666pF @ 50V
功率 - 最大: 52W
安裝類型: 表面貼裝
封裝/外殼: PowerPAK? 1212-8
供應商設備封裝: PowerPAK? 1212-8
包裝: Digi-Reel®