| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IPB038N12N3 G | Infineon Technologies | MOSFET N-CH 120V 120A TO263-3 | 1,695 | 1:$6.58000 10:$5.92300 25:$5.37440 100:$4.82590 250:$4.38720 500:$3.83880 |
| IPB097N08N3 G | Infineon Technologies | MOSFET N-CH 80V 70A TO263-3 | 1,980 | 1:$1.76000 10:$1.50800 25:$1.35760 100:$1.23190 250:$1.10616 500:$0.95532 |
| BSC010NE2LSI | Infineon Technologies | MOSFET N-CH 25V 38A TDSON-8 | 9,085 | 1:$3.07000 10:$2.63100 25:$2.36760 100:$2.14840 250:$1.92920 500:$1.66612 1,000:$1.40304 2,500:$1.27150 |
| IPB097N08N3 G | Infineon Technologies | MOSFET N-CH 80V 70A TO263-3 | 1,980 | 1:$1.76000 10:$1.50800 25:$1.35760 100:$1.23190 250:$1.10616 500:$0.95532 |
| BSB280N15NZ3 G | Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | 9,900 | 1:$3.03000 10:$2.59300 25:$2.33360 100:$2.11750 250:$1.90148 500:$1.64218 1,000:$1.38288 2,500:$1.25324 |
| BSC010NE2LSI | Infineon Technologies | MOSFET N-CH 25V 38A TDSON-8 | 9,085 | 1:$3.07000 10:$2.63100 25:$2.36760 100:$2.14840 250:$1.92920 500:$1.66612 1,000:$1.40304 2,500:$1.27150 |
| BSB280N15NZ3 G | Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | 9,900 | 1:$3.03000 10:$2.59300 25:$2.33360 100:$2.11750 250:$1.90148 500:$1.64218 1,000:$1.38288 2,500:$1.25324 |
| BSB280N15NZ3 G | Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | 5,000 | 5,000:$1.12359 10,000:$1.08038 25,000:$1.05877 50,000:$1.03716 |
| BUZ30A H3045A | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | 1,989 | 1:$2.66000 10:$2.28400 25:$2.05560 100:$1.86540 250:$1.67508 500:$1.44666 |
| BUZ30A H3045A | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | 1,989 | 1:$2.66000 10:$2.28400 25:$2.05560 100:$1.86540 250:$1.67508 500:$1.44666 |
| BUZ30A H3045A | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | 1,000 | 1,000:$1.10403 2,000:$1.02789 5,000:$0.98982 10,000:$0.95175 25,000:$0.93272 50,000:$0.91368 |
| BSC010NE2LSI | Infineon Technologies | MOSFET N-CH 25V 38A TDSON-8 | 5,000 | 5,000:$1.13997 10,000:$1.09613 25,000:$1.07420 50,000:$1.05228 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 120V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 120A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.8 毫歐 @ 100A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 270µA |
| 閘電荷(Qg) @ Vgs: | 211nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 13800pF @ 60V |
| 功率 - 最大: | 300W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | PG-TO263-2 |
| 包裝: | Digi-Reel® |