分離式半導體產(chǎn)品 BSC010NE2LSI品牌、價格、PDF參數(shù)

BSC010NE2LSI • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
BSC010NE2LSI Infineon Technologies MOSFET N-CH 25V 38A TDSON-8 9,085 1:$3.07000
10:$2.63100
25:$2.36760
100:$2.14840
250:$1.92920
500:$1.66612
1,000:$1.40304
2,500:$1.27150
BSB280N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2 9,900 1:$3.03000
10:$2.59300
25:$2.33360
100:$2.11750
250:$1.90148
500:$1.64218
1,000:$1.38288
2,500:$1.25324
BSB280N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2 5,000 5,000:$1.12359
10,000:$1.08038
25,000:$1.05877
50,000:$1.03716
BUZ30A H3045A Infineon Technologies MOSFET N-CH 200V 21A TO-263 1,989 1:$2.66000
10:$2.28400
25:$2.05560
100:$1.86540
250:$1.67508
500:$1.44666
BUZ30A H3045A Infineon Technologies MOSFET N-CH 200V 21A TO-263 1,989 1:$2.66000
10:$2.28400
25:$2.05560
100:$1.86540
250:$1.67508
500:$1.44666
BUZ30A H3045A Infineon Technologies MOSFET N-CH 200V 21A TO-263 1,000 1,000:$1.10403
2,000:$1.02789
5,000:$0.98982
10,000:$0.95175
25,000:$0.93272
50,000:$0.91368
BSC010NE2LSI Infineon Technologies MOSFET N-CH 25V 38A TDSON-8 5,000 5,000:$1.13997
10,000:$1.09613
25,000:$1.07420
50,000:$1.05228
BSC010NE2LSI • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 25V
電流 - 連續(xù)漏極(Id) @ 25° C: 100A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 1.05 毫歐 @ 30A，10V
Id 時的 Vgs(th)（最大）: 2V @ 250µA
閘電荷(Qg) @ Vgs: 59nC @ 10V
輸入電容 (Ciss) @ Vds: 4200pF @ 12V
功率 - 最大: 96W
安裝類型: 表面貼裝
封裝/外殼: 8-PowerTDFN
供應商設備封裝: PG-TDSON-8
包裝: 剪切帶 (CT)