分離式半導體產(chǎn)品 SI4622DY-T1-GE3品牌、價格、PDF參數(shù)

SI4622DY-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
SI4622DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 607 1:$2.45000
25:$1.89000
100:$1.71500
250:$1.54000
500:$1.33000
1,000:$1.12000
SI4622DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.94500
5,000:$0.91000
12,500:$0.87500
25,000:$0.85750
62,500:$0.84000
SI7222DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 1212-8 PPAK 190 1:$2.00000
25:$1.53920
100:$1.39650
250:$1.25400
500:$1.08300
1,000:$0.91200
SI7222DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 1212-8 PPAK 190 1:$2.00000
25:$1.53920
100:$1.39650
250:$1.25400
500:$1.08300
1,000:$0.91200
SI7222DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 1212-8 PPAK 0 3,000:$0.76950
6,000:$0.74100
15,000:$0.71250
30,000:$0.69825
75,000:$0.68400
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 151 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 151 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 0 3,000:$0.56000
6,000:$0.53200
15,000:$0.51000
30,000:$0.49600
75,000:$0.48000
SI4622DY-T1-GE3 • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: 2 個 N 溝道(雙)
FET 特點: 標準
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 8A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 16 毫歐 @ 9.6A,10V
Id 時的 Vgs(th)(最大): 2.5V @ 1mA
閘電荷(Qg) @ Vgs: 60nC @ 10V
輸入電容 (Ciss) @ Vds: 2458pF @ 15V
功率 - 最大: 3.3W,3.1W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOICN
包裝: 剪切帶 (CT)