參數(shù)資料
型號: EC3H02B
廠商: Sanyo Electric Co.,Ltd.
英文描述: VHF to UHF Low-Noise Wide-Band Amplifier Applications
中文描述: 甚高頻到超高頻低噪聲寬帶放大器應用
文件頁數(shù): 1/5頁
文件大小: 41K
代理商: EC3H02B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6523
EC3H02B
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92500TS (KOTO) TA-2480 No.6523–1/5
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2183
[EC3H02B]
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain :
S21e
2
=12dB typ (f=1GHz).
· High cutoff frequency : f
T
=7GHz typ.
· Ultrasmall (1006size), slim (0.5mm) leadless pack-
age.
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : E-CSP1006-3
0.35
0.2
0
0.15
0.05
0.15
0.6
0
0
0
0
0
1
0
0.5
0.05
(Bottomview)
3
1
2
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
a
V
t
e
C
o
p
s
D
e
s
r
m
e
s
a
B
E
a
-
e
C
-
e
C
-
m
E
r
e
C
r
e
C
V
V
V
O
O
O
B
E
B
C
C
E
IC
PC
j
g
T
0
0
2
0
0
0
0
2
1
V
V
V
e
g
a
e
g
B
7
0
5
5
A
W
m
m
n
1
1
1
e
p
e
p
m
m
e
e
T
T
n
e
o
n
a
S
u
J
g
+
o
5
5
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
0
1
8
1
m
t
e
C
e
C
n
G
P
h
w
a
a
p
r
n
a
T
f
C
f
C
t
e
C
d
n
a
B
-
G
C
t
p
O
e
s
v
e
R
r
r
m
C
D
e
C
E
I
I
O
O
B
B
F
fT
o
e
C
C
E
hE
VB
C
VB
E
VE
C
VE
C
VB
C
VB
C
VE
C
VE
C
VE
C
I
V
I
V
I
V
5
I
V
5
=
0
1
=
0
1
=
I
V
5
=
I
V
2
=
0
1
1
=
=
=
E0
=
C0
=
C
=
C
=
1
=
V
=
V
A
A
μ
μ
t
0
0
A
A
z
z
A
=
A
m
m
H
H
m
0
0
M
M
0
2
m
3
2
2
0
5
0
1
t
u
d
o
e
c
C
7
z
H
F
p
F
p
B
d
B
d
B
d
G
n
a
b
C
7
4
1
5
0
2
e
c
n
a
a
p
a
1
5
2
n
G
r
n
a
T
d
w
r
F
|
|
e
e
F
1
1
N
2
2
S
S
|
|
2
1
C
C
z
H
z
G
H
1
G
=
=
=
9
2
2
1
e
g
e
s
N
I
V
5
=
C
z
H
G
1
=
A
m
7
=
8
相關PDF資料
PDF描述
EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications
EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications
EC3H04C High-Frequency Low-Noise Amplifier and OSC Applications
EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications
相關代理商/技術參數(shù)
參數(shù)描述
EC3H02BA 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications
EC3H02BA_09 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications
EC3H02BA-TL-H 功能描述:TRANS NPN 10V 70A ECSP1006-3 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿(最大):4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)(dB典型值@頻率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA,3V 電流 - 集電極 (Ic)(最大):45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD,扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
EC3H02C 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications
EC3H03B 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications