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參數(shù)資料
| 型號(hào)： | EDB101 |
| 廠商： | RECTRON LTD |
| 元件分類： | 橋式整流 |
| 英文描述： | GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER |
| 中文描述： | 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC, DB-1, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 224K |
| 代理商： | EDB101 |
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
EDB101
THRU
EDB106
DB-1
Dimensions in inches and (millimeters)
FEATURES
* Surge overload rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
* Good for automatic insertion
* UL listed the recongnized component directory,file #94233
* Epoxy: Device has UL flammability classification 94V-O
MECHANICAL DATA
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
2006-11
REV:B
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VDC
IO
IFSM
TJ,TSTG
VRMS
Volts
Amps
1.0
30
-55 to + 150
0
C
pF
UNITS
Maximum Average Forward Output Current at TA = 55
oC
50
150
200
100
300
400
35
105
140
70
210
280
Volts
Amps
EDB101
EDB103
EDB104
EDB102
EDB105
EDB106
EDB101
EDB103
EDB104
EDB102
EDB105
EDB106
50
150
200
100
300
400
DC Blocking Voltage per element
CHARACTERISTICS
V
trr
F
SYMBOL
IR
UNITS
1.05
1.35
1.70
100
m
Amps
nSec
m
Amps
at 1.0A DC
Maximum Forward Voltage
Maximum Reverse Recovery Time (Note 1)
Volts
@TA = 25
oC
@TA = 100
oC
5.0
R q J A
0
C/W
R q J L
Typical Thermal Resistance (Note 3)
Note: 1.Test Conditions: IF=0.5A,IR=-1.0A,IRR=-0.25A.
2.Measured at 1MHz and applied reverse voltage of 4.0 volts.
3.Thermal Resistance : Mounted on PCB.
38
12
50
CJ
Typical Junction Capacitance (Note 2)
15
10
Maximum Reverse Current at Rated
.205 ( 5.2 )
.195 ( 5.0 )
.165 ( 4.2 )
.155 ( 3.9 )
.135 ( 3.4 )
.115 ( 2.9 )
.335 ( 8.51 )
.320 ( 8.12 )
.350 ( 8.9 )
.300 ( 7.6 )
.245 ( 6.2 )
.255 ( 6.5 )
( 0.5 )
( 1.5 )
.020
.060
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDB102 | GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER |
| EDB103 | GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER |
| EDB104 | GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER |
| EDB105 | GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER |
| EDB106 | GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER |
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| EDB101C | 功能描述:橋式整流器 1A 50V 50ns G RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| EDB101S | 功能描述:橋式整流器 NON-CATALOG 1/01 SO-4 1A 50V RECT RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| EDB101SC | 功能描述:橋式整流器 1A 50V 50ns SM GP RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| EDB101S-T | 功能描述:整流器 1A 50V 50ns SM GP RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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