參數(shù)資料
型號(hào)： EDD5116AFTA
廠商： Elpida Memory, Inc.
英文描述： 512M bits DDR SDRAM
中文描述： 512M比特DDR內(nèi)存
文件頁(yè)數(shù)： 6/52頁(yè)
文件大?。?/td> 477K
代理商： EDD5116AFTA
EDD5108AFTA, EDD5116AFTA
Data Sheet E0699E50 (Ver. 5.0)
6
DC Characteristics 1 (TA = 0°C to +70
°
C, VDD, VDDQ = 2.6V ± 0.1V, VSS, VSSQ = 0V) [DDR400]
max.
Parameter
Symbol
Grade
×
8
×
16
Unit
Test condition
Notes
Operating current
(ACT-PRE)
IDD0
120
120
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 3,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACT-READ-PRE)
IDD1
160
160
mA
1, 2, 5
Idle power down standby
current
IDD2P
5
5
mA
CKE
≤
VIL
4
Floating idle standby current IDD2F
30
30
mA
≥
VIH, /CS
≥
VIH
CKE
≥
VIH, /CS
≥
VIH
CKE
Quiet idle standby current
IDD2Q
25
25
mA
Active power down standby
current
IDD3P
30
30
mA
CKE
≤
VIL
3
Active standby current
IDD3N
60
60
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 3
CKE
≥
VIH, BL = 2,
CL = 3
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
215
215
mA
1, 2, 5, 6
IDD4W
215
215
mA
1, 2, 5, 6
Auto-refresh current
IDD5
220
220
mA
Self-refresh current
IDD6
5
5
mA
Operating current
(4 banks interleaving)
IDD7A
400
400
mA
BL = 4
1, 5, 6, 7
DC Characteristics 1 (TA = 0°C to +70
°
C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [DDR333, 266]
max.
Parameter
Symbol
Grade
×
8
×
16
Unit
Test condition
Notes
Operating current
(ACT-PRE)
IDD0
-6B
-7A, -7B
105
95
105
95
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACT-READ-PRE)
IDD1
-6B
-7A, -7B
140
130
140
130
mA
1, 2, 5
Idle power down standby
current
IDD2P
5
5
mA
CKE
≤
VIL
4
Floating idle standby current IDD2F
-6B
-7A, -7B
30
25
30
25
mA
CKE
≥
VIH, /CS
≥
VIH,
DQ, DQS, DM = VREF
CKE
≥
VIH, /CS
≥
VIH,
DQ, DQS, DM = VREF
4, 5
Quiet idle standby current
IDD2Q
20
20
mA
4, 10
Active power down standby
current
IDD3P
30
30
mA
CKE
≤
VIL
3
Active standby current
IDD3N
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
55
55
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 2.5
CKE
≥
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
185
155
185
160
205
195
185
155
185
160
205
195
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto-refresh current
IDD5
mA
Self-refresh current
IDD6
5
5
mA
Operating current
(4 banks interleaving)
IDD7A
-6B
-7A, -7B
380
345
380
345
mA
BL = 4
1, 5, 6, 7
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