參數(shù)資料
型號(hào)： EDE1104ABSE-4A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 1G bits DDR2 SDRAM
中文描述： 256M X 4 DDR DRAM, 0.6 ns, PBGA68
封裝： ROHS COMPLIANT, FBGA-68
文件頁(yè)數(shù)： 54/82頁(yè)
文件大?。?/td> 618K
代理商： EDE1104ABSE-4A-E
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
54
Burst Mode Operation
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from memory
locations (read cycle). The parameters that define how the burst mode will operate are burst sequence and burst
length. DDR2 SDRAM supports 4 bits burst and 8bits burst modes only. For 8 bits burst mode, full interleave
address ordering is supported, however, sequential address ordering is nibble based for ease of implementation.
The burst type, either sequential or interleaved, is programmable and defined by the address bit 3 (A3) of the MRS,
which is similar to the DDR-I SDRAM operation. Seamless burst read or write operations are supported.
Unlike DDR-I devices, interruption of a burst read or writes operation is limited to ready by Read or Write by Write at
the boundary of Burst 4. Therefore the burst stop command is not supported on DDR2 SDRAM devices.
[Burst Length and Sequence]
Burst length
Starting address (A2, A1, A0) Sequential addressing (decimal)
Interleave addressing (decimal)
000
0, 1, 2, 3
0, 1, 2, 3
001
1, 2, 3, 0
1, 0, 3, 2
010
2, 3, 0, 1
2, 3, 0, 1
4
011
3, 0, 1, 2
3, 2, 1, 0
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
011
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
8
111
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
Note: Page length is a function of I/O organization and column addressing
32M bits
×
4 organization (CA0 to CA9, CA11); Page Length = 2048 bits
16M bits
×
8 organization (CA0 to CA9); Page Length = 1024 bits
8M bits
×
16 organization (CA0 to CA9); Page Length = 1024 bits
相關(guān)PDF資料
PDF描述
EDE1104ABSE-5C-E 1G bits DDR2 SDRAM
EDE1104ABSE-6C-E 1G bits DDR2 SDRAM
EDE1104ABSE-6E-E 1G bits DDR2 SDRAM
EDE1104ABSE-8E-E 1G bits DDR2 SDRAM
EDE1108ABSE 1G bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE1104ABSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ABSE-6C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ABSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ABSE-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ACBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*