參數(shù)資料
型號： EDE1104ABSE
廠商： Elpida Memory, Inc.
英文描述： 1G bits DDR2 SDRAM
中文描述： 1克位DDR2 SDRAM內(nèi)存
文件頁數(shù)： 8/82頁
文件大?。?/td> 618K
代理商： EDE1104ABSE
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
8
DC Characteristics 1 (TC = 0
°
C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
max.
Parameter
Symbol Grade
×
4
×
8
×
16
120
110
110
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(ACT-PRE)
IDD0
-8E
-6C
-6E
-5C
-4A
110
100
100
95
90
110
100
100
95
90
mA
Operating current
(ACT-READ-PRE)
IDD1
-8E
-6C
-6E
-5C
-4A
120
110
110
105
100
125
115
115
110
105
140
130
130
mA
Precharge power-
down standby
current
IDD2P
-8E
-6C
-6E
-5C
-4A
-8E
-6C
-6E
-5C
-4A
-8E
-6C
-6E
-5C
-4A
-8E
-6C
-6E
-5C
-4A
-8E
-6C
-6E
-5C
-4A
-8E
-6C
-6E
-5C
-4A
10
10
10
10
10
40
35
35
30
30
45
40
40
35
30
40
35
35
30
30
20
20
20
20
20
90
80
80
65
55
10
10
10
10
10
40
35
35
30
30
45
40
40
35
30
40
35
35
30
30
20
20
20
20
20
90
80
80
65
55
10
10
10
35
30
30
40
35
30
35
30
30
20
20
20
80
65
55
mA
Precharge quiet
standby current
IDD2Q
mA
Idle standby current IDD2N
mA
IDD3P-F
mA
Fast PDN Exit
MRS (12) = 0
Active power-down
standby current
IDD3P-S
mA
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and address
bus inputs are STABLE;
Data bus inputs are
FLOATING
Slow PDN Exit
MRS (12) = 1
Active standby
current
IDD3N
mA
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(Burst read
operating)
IDD4R
-8E
-6C
-6E
-5C
-4A
205
175
175
145
120
225
195
195
165
140
230
190
160
mA
Operating current
(Burst write
operating)
IDD4W
-8E
-6C
-6E
-5C
-4A
205
175
175
145
120
225
195
195
165
140
245
200
170
mA
相關(guān)PDF資料
PDF描述
EDE1104ABSE-4A-E 1G bits DDR2 SDRAM
EDE1104ABSE-5C-E 1G bits DDR2 SDRAM
EDE1104ABSE-6C-E 1G bits DDR2 SDRAM
EDE1104ABSE-6E-E 1G bits DDR2 SDRAM
EDE1104ABSE-8E-E 1G bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE1104ABSE-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ABSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ABSE-6C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ABSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1104ABSE-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
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