參數(shù)資料
型號(hào): EDE1108ABSE-8E-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 1G bits DDR2 SDRAM
中文描述: 128M X 8 DDR DRAM, 0.4 ns, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁(yè)數(shù): 2/82頁(yè)
文件大小: 618K
代理商: EDE1108ABSE-8E-E
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
2
Ordering Information
Part number
EDE1104ABSE-8E-E
EDE1104ABSE-6C-E
EDE1104ABSE-6E-E
EDE1104ABSE-5C-E
EDE1104ABSE-4A-E
EDE1108ABSE-8E-E
EDE1108ABSE-6C-E
EDE1108ABSE-6E-E
EDE1108ABSE-5C-E
EDE1108ABSE-4A-E
EDE1116ABSE-6E-E
EDE1116ABSE-5C-E
EDE1116ABSE-4A-E
Mask
version
Organization
(words
×
bits)
Internal
Banks
Speed bin
(CL-tRCD-tRP)
DDR2-800 (5-5-5)
DDR2-667 (4-4-4)
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
DDR2-400 (3-3-3)
DDR2-800 (5-5-5)
DDR2-667 (4-4-4)
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
DDR2-400 (3-3-3)
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
DDR2-400 (3-3-3)
Package
B
256M
×
4
8
68-ball FBGA
128M
×
8
64M
×
16
92-ball FBGA
Part Number
Elpida Memory
Density / Bank
11: 1Gb / 8-bank
Organization
04: x4
08: x8
16: x16
Power Supply, Interface
A: 1.8V, SSTL_18
Die Rev.
Package
SE: FBGA (with back cover)
Speed
8E: DDR2-800 (5-5-5)
6C: DDR2-667 (4-4-4)
6E: DDR2-667 (5-5-5)
5C: DDR2-533 (4-4-4)
4A: DDR2-400 (3-3-3)
Product Family
E: DDR2
Type
D: Monolithic Device
E D E 11 04 A B SE - 8E - E
Environment code
E: Lead Free
(RoHS compliant)
相關(guān)PDF資料
PDF描述
EDE1116ABSE 1G bits DDR2 SDRAM
EDE1116ABSE-4A-E 1G bits DDR2 SDRAM
EDE1116ABSE-5C-E 1G bits DDR2 SDRAM
EDE2104ABSE 2G bits DDR2 SDRAM
EDE2104ABSE-5C-E 2G bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE1108ACBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1108ACBG-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
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EDE1108ACBG-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1108ACSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM