參數(shù)資料
型號(hào)： EDE2508ABSE-6C-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256M bits DDR2 SDRAM
中文描述： 32M X 8 DDR DRAM, 0.45 ns, PBGA60
封裝： ROHS COMPLIANT, FBGA-60
文件頁(yè)數(shù)： 21/66頁(yè)
文件大?。?/td> 708K
代理商： EDE2508ABSE-6C-E
EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
21
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Continue burst to end
-> Write recovering
Continue burst to end
-> Write recovering
ILLEGAL
Note
Write
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
Burst interrupt
1, 4
L
H
L
L
BA, CA, A10 (AP)
WRITA
Burst interrupt
1, 4
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Read with
H
×
×
×
×
DESL
Continue burst to end -> Precharging
auto precharge
L
H
H
H
×
NOP
Continue burst to end -> Precharging
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
Write with auto
Precharge
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Continue burst to end
->Write recovering with auto precharge
Continue burst to end
->Write recovering with auto precharge
ILLEGAL
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
相關(guān)PDF資料
PDF描述
EDE2516ABSE-6C-E 256M bits DDR2 SDRAM
EDE2508ABSE-6E-E 256M bits DDR2 SDRAM
EDE2516ABSE-6E-E 256M bits DDR2 SDRAM
EDE2508ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE2508ABSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2508ABSE-GE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2508ABSE-GE-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2508ACSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2508ACSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
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