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參數(shù)資料
| 型號： | EDE2508ABSE-GE |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 256M bits DDR2 SDRAM for HYPER DIMM |
| 中文描述： | 256M比特的超DDR2 SDRAM的內(nèi)存 |
| 文件頁數(shù)： | 7/66頁 |
| 文件大?。?/td> | 708K |
| 代理商： | EDE2508ABSE-GE |
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EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
7
DC Characteristics 1 (TC = 0
°
C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
max.
×
8
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and
address bus inputs are
STABLE;
Data bus inputs are
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Grade
×
16
-6C, -6E 62
62
Operating current
(ACT-PRE)
IDD0
-5C
58
58
mA
-6C, -6E 72
72
Operating current
(ACT-READ-PRE)
IDD1
-5C
70
70
mA
-6C, -6E 6
6
Precharge power-down
standby current
IDD2P
-5C
6
6
mA
-6C, -6E 15
15
Precharge quiet standby
current
IDD2Q
-5C
14
14
mA
-6C, -6E 18
18
Idle standby current
IDD2N
-5C
16
16
mA
-6C, -6E 26
26
IDD3P-F
-5C
22
22
mA
Fast PDN Exit
MRS(12) = 0
-6C, -6E 20
20
Active power-down
standby current
IDD3P-S
-5C
15
15
mA
Slow PDN Exit
MRS(12) = 1
-6C, -6E 50
50
Active standby current
IDD3N
-5C
45
45
mA
-6C, -6E 140
160
Operating current
(Burst read operating)
IDD4R
-5C
120
130
mA
-6C, -6E 150
180
Operating current
(Burst write operating)
IDD4W
-5C
130
140
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE2516ABSE-GE | 256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2508ABSE-GE-E | 256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2516ABSE | 256M bits DDR2 SDRAM |
| EDE2516ABSE-GE-E | 256M bits DDR2 SDRAM for HYPER DIMM |
| EDE5104ABSE | 512M bits DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE2508ABSE-GE-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2508ACSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2508ACSE-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2508ACSE-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2508ACSE-8E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
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