參數(shù)資料
型號(hào)： EDE2516ABSE-GE-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256M bits DDR2 SDRAM for HYPER DIMM
中文描述： 16M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： ROHS COMPLIANT, FBGA-84
文件頁(yè)數(shù)： 1/66頁(yè)
文件大小： 708K
代理商： EDE2516ABSE-GE-E
Document No. E0573E30 (Ver. 3.0)
Date Published May 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2004-2005
PRELIMINARY DATA SHEET
256M bits DDR2 SDRAM
EDE2508ABSE (32M words
×
8 bits)
EDE2516ABSE (16M words
×
16 bits)
Description
The EDE2508ABSE is a 256M bits DDR2 SDRAM
organized as 8,388,608 words
×
8 bits
×
4 banks.
It is packaged in 60-ball FBGA (
μ
BGA
) package.
The EDE2516ABSE is a 256M bits DDR2 SDRAM
organized as 4,194,304 words
×
16 bits
×
4 banks.
It is packaged in 84-ball FBGA (
μ
BGA) package.
Features
Power supply: VDD, VDDQ
=
1.8V
±
0.1V
Double-data-rate architecture: two data transfers per
clock cycle
Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
Four internal banks for concurrent operation
Data mask (DM) for write data
Burst lengths: 4, 8
/CAS Latency (CL): 4, 5
Auto precharge operation for each burst access
Auto refresh and self refresh modes
Average refresh period
7.8
μ
s at 0
°
C
≤
TC
≤
+
85
°
C
3.9
μ
s at
+
85
°
C
<
TC
≤
+
95
°
C
SSTL_18 compatible I/O
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
Programmable RDQS, /RDQS output for making
×
8
organization compatible to
×
4 organization
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation.
FBGA (
μ
BGA) package with lead free solder
(Sn-Ag-Cu)
相關(guān)PDF資料
PDF描述
EDE5104ABSE 512M bits DDR2 SDRAM
EDE5104AGSE 512M bits DDR2 SDRAM
EDE5108AGSE Circular Connector; No. of Contacts:6; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:17-6 RoHS Compliant: No
EDE5104AGSE-4A-E Circular Connector; No. of Contacts:6; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:9; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:9-35 RoHS Compliant: No
EDE5108AGSE-4A-E Circular Connector; No. of Contacts:6; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:9; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:9-35 RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE2516ACSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516ACSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516ACSE-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516AEBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516AEBG-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*