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參數(shù)資料
| 型號： | EL5027IWTZ-T7A |
| 廠商： | Intersil |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 0K |
| 描述： | IC BUFFER DUAL R-R I/O 6-TSOT |
| 標(biāo)準(zhǔn)包裝： | 250 |
| 放大器類型： | 緩沖器 |
| 電路數(shù)： | 2 |
| 輸出類型： | 滿擺幅 |
| 轉(zhuǎn)換速率： | 1.2 V/µs |
| -3db帶寬： | 2.5MHz |
| 電流 - 輸入偏壓： | 2nA |
| 電壓 - 輸入偏移： | 1000µV |
| 電流 - 電源： | 110µA |
| 電流 - 輸出 / 通道： | 120mA |
| 電壓 - 電源，單路/雙路(±)： | 4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | SOT-23-6 細(xì)型，TSOT-23-6 |
| 供應(yīng)商設(shè)備封裝： | TSOT-23-6 |
| 包裝： | 帶卷 (TR) |
2
FN7426.1
May 4, 2007
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS+ +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = +25°C Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
1
15
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
5
V/°C
IB
Input Bias Current
VCM = 0V
2
50
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
-4.5V
≤ V
OUT ≤ 4.5V
0.995
1.005
V/V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
-4.92
-4.85
V
VOH
Output Swing High
IL = 5mA
4.85
4.92
V
ISC
Short-circuit Current
Short to GND
±120
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
55
80
dB
IS
Supply Current (Per Buffer)
No load
110
160
A
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
-4.0V
≤ V
OUT ≤ 4.0V, 20% to 80%
0.7
1.2
V/s
tS
Settling to +0.1%
VO = 2V step
900
ns
BW
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
2.5
MHz
CS
Channel Separation
f = 5MHz
75
dB
NOTES:
1. Measured over the operating temperature range
2. Slew rate is measured on rising and falling edges
EL5027
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