FN6837.2 Driving Capacitive Loads As load capacitance increases, the -3dB bandwidth will decrease and peaking can occur. Depending on the appli" />
參數(shù)資料
型號: EL5411TIREZ
廠商: Intersil
文件頁數(shù): 4/16頁
文件大?。?/td> 0K
描述: IC OPAMP GP RR 60MHZ QD 14HTSSOP
標準包裝: 94
放大器類型: 通用
電路數(shù): 4
輸出類型: 滿擺幅
轉換速率: 100 V/µs
增益帶寬積: 32MHz
-3db帶寬: 60MHz
電流 - 輸入偏壓: 2nA
電壓 - 輸入偏移: 3500µV
電流 - 電源: 12.3mA
電流 - 輸出 / 通道: 70mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 19 V,±2.25 V ~ 9.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 14-TSSOP (0.173",4.40mm 寬)裸露焊盤
供應商設備封裝: 14-HTSSOP
包裝: 管件
12
FN6837.2
Driving Capacitive Loads
As load capacitance increases, the -3dB bandwidth will
decrease and peaking can occur. Depending on the
application, it may be necessary to reduce peaking and
to improve device stability. To improve device stability a
snubber circuit or a series resistor may be added to the
output of the EL5411T.
A snubber is a shunt load consisting of a resistor in series
with a capacitor. An optimized snubber can improve the
phase margin and the stability of the EL5411T. The
advantage of a snubber circuit is that it does not draw
any DC load current or reduce the gain.
Another method to reduce peaking is to add a series output
resistor (typically between 1Ω to 10Ω). Depending on the
capacitive loading, a small value resistor may be the most
appropriate choice to minimize any reduction in gain.
Power Dissipation
With the high-output drive capability of the EL5411T
amplifiers, it is possible to exceed the +150°C absolute
maximum junction temperature under certain load
current conditions. It is important to calculate the
maximum power dissipation of the EL5411T in the
application. Proper load conditions will ensure that the
EL5411T junction temperature stays within a safe
operating region.
The maximum power dissipation allowed in a package is
determined according to Equation 1:
where:
TJMAX = Maximum junction temperature
TAMAX = Maximum ambient temperature
ΘJA = Thermal resistance of the package
PDMAX = Maximum power dissipation allowed
The total power dissipation produced by an IC is the total
quiescent supply current times the total power supply
voltage, plus the power dissipation in the IC due to the
loads, or:
when sourcing, and:
when sinking,
where:
i = 1 to 4
(1, 2, 3, 4 corresponds to Channel A, B, C, D respectively)
VS = Total supply voltage (VS+ - VS-)
VS+ = Positive supply voltage
VS- = Negative supply voltage
ISMAX = Maximum supply current per amplifier
(ISMAX = EL5411T quiescent current ÷ 4)
VOUT = Output voltage
ILOAD = Load current
Device overheating can be avoided by calculating the
minimum resistive load condition, RLOAD, resulting in
the highest power dissipation. To find RLOAD set the two
PDMAX equations equal to each other and solve for
VOUT/ILOAD. Reference the package power dissipation
curves, Figures 32 and 33, for further information.
PDMAX
TJMAX TAMAX
θ
JA
---------------------------------------------
=
(EQ. 1)
PDMAX
ΣiV
[
S
ISMAX V
(
S+VOUTi )
ILOADi
×
+
×]
=
(EQ. 2)
PDMAX
ΣiV
[
S
ISMAX V
(
OUTiVS- )
ILOADi
×
+
×]
=
(EQ. 3)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
255075
100
125
150
AMBIENT TEMPERATURE (°C)
POWER
D
IS
S
IP
AT
ION
(
W
)
FIGURE 32. PACKAGE POWER DISSIPATION vs
AMBIENT TEMPERATURE
JEDEC JESD51-3 LOW EFFECTIVE
THERMAL CONDUCTIVITY TEST BOARD
85
θJA = +130°C/W
TQFN16
θJA = +140°C/W
HTSSOP14
893mW
962mW
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
P
O
WE
R
DI
SSI
PA
TI
ON
(
W
)
FIGURE 33. PACKAGE POWER DISSIPATION vs
AMBIENT TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD - EXPOSED
DIE PAD SOLDERED TO PCB PER JESD51-5
85
θJA = +40°C/W
TQFN16
θJA = +38°C/W
HTSSOP14
3.29W
3.13W
EL5411T
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