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參數(shù)資料
| 型號： | EM23C2000 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | High Performance 256K × 8 CMOS ROM(高性能2M位（256K × 8）CMOS ROM) |
| 中文描述： | 高性能256K × 8的CMOS光盤（高性能200萬位（256K × 8）的CMOS光盤） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | EM23C2000 |
3
* This specification are subject to be changed without notice.
EM23C2000 SERIES
256K X 8 CMOS ROM
10.23.1997
EM23C2000EP/FP DC ELECTRICAL CHARACTERISTICS
(V
CC
= 4.5V to 5.5V,
T
OPR
=0~70
°
C)
Parameter
Sym.
Condition
Input “Low” voltage
V
IL
Input “High” voltage
V
IH
Output “Low” voltage
V
OL
I
OL
= 400mA
Output “High” voltage
V
OH
I
OH
= -100mA
Input leakage current
I
LI
V
IN
= 0V to V
CC
Output leakage current
I
LO
V
OUT
=0V to V
CC
Operating current
I
CC
t
RC
= 150ns
Standby current
I
SB
CE = V
IH
CE = V
CC
-0.2V
Input capacitance
C
IN
f = 1MHz,
Output capacitance
C
OUT
t
A
= 25
°
C
Min.
-0.3
2.2
Max.
Unit
V
V
V
V
μ
A
μ
A
mA
mA
μ
A
pF
pF
Note
4.5V~5.5V: 0.8
V
CC
+0.3
0.4
2.4
10
10
35
2
50
10
10
1
2
ABSOLUTE MAXIMUM RATINGS
Items
Sym.
Condition
Rating
Supply voltage
Input voltage
Output voltage
Operating temperature
Storage temperature
V
CC
V
IN
V
OUT
T
OPR
T
STR
- 0.3V to 7 V
- 0.3V to V
CC
+0.3V
- 0.3V to V
CC
+0.3V
0 to 70
°
C
-65
°
C to 150
°
C
EM23C2000
SUPPLY VOLTAGE
V
CC
4.5
5.5
V
RECOMMENDED OPERATING CONDITIONS (T
OPR
=0 to 70
°
C)
Type
Parameter
Sym.
Min.
Max.
Unit
Note:
1. CE /OE =V
, OE = V
, outputs open
2. Automatic power down version
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