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參數(shù)資料
| 型號： | EM23C2000 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | High Performance 256K × 8 CMOS ROM(高性能2M位（256K × 8）CMOS ROM) |
| 中文描述： | 高性能256K × 8的CMOS光盤（高性能200萬位（256K × 8）的CMOS光盤） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 30K |
| 代理商： | EM23C2000 |
* This specification are subject to be changed without notice.
EM23C2000 SERIES
256K X 8 CMOS ROM
4
10.23.1997
AC CHARACTERISTICS
Note: 1. Applied to “A” versions (power down) only.
2. Outputs high impedence delay (t
DF
) is measure from either CE or OE going high or CS going inactive,
whichever occurs first.
3. Functions of CS/CS & OE/OE are identical.
EM23C2000FP, EM23C2000EP
(V
CC
= 4.5V to 5.5V,
T
OPR
=0~70
°
C)
Parameter
Cycle time
Address access time
Output hold after address change
Chip enable access time
Chip select access time
Output enable access time
Output disable delay
Sym.
t
CYC
t
ACC
t
OH
t
CE
t
CS
t
OE
t
DF
Min.
150
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
Condition
150
10
150
70
70
50
1
3
1,3
2
TIMING DIAGRAM
VALID ADDRESS
PREVIOUS
DATA
VALID DATA
T
ACC
T
OH
Address
BUS
DATA
BUS
Propagation delay from Address (CE/ CE=Enable or CS/ CS=Active)
VALID
VALID
T
Propagation delay from Chip Enable or Chip Select (Address Valid)
High impedance
DATA
BUS
CS/ CS
CE/ CE
T
CE
T
CS
DF
VALID DATA
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