參數(shù)資料
型號(hào)： EM39LV80055RH
廠商： ELAN Microelctronics Corp .
英文描述： IC, DIGITAL, OCTAL BUS XCEIVER & 3.3V TO 5.0V, SHFTR BIDRCNTL, V XLATOR, 24PIN T
中文描述： 分位（512Kx16）閃存
文件頁(yè)數(shù)： 11/25頁(yè)
文件大?。?/td> 295K
代理商： EM39LV80055RH
EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 11 of
25
Operating Range
Model Name
Ambient Temperature
V
DD
EM39LV800
0
°
C to +70
°
C
2.7~3.6V
Table 7:
Operating Range
AC Conditions of Test
Input Rise/Fall Time ..................................................................... 5ns
Output Load ................................................................................. CL=30pF for 55Rns
Output Load ................................................................................. CL=100pF for 70ns/90ns
See Figures 14 and 15
DC CHARACTERISTICS (CMOS Compatible)
Parameter
Description
Test Conditions
Min
Max
Unit
I
DD
Power Supply Current
Read
Program and Erase
Address Input =V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
,
30
30
mA
mA
I
SB
Standby V
DD
Current
CE#=V
IHC
, V
DD
=V
DD
Max
20
μ
A
I
LI
I
LO
Input Leakage Current
Output Leakage Current
V
IN
=GND to V
DD,
V
DD
=V
DD
Max
V
OUT
=GND to V
DD,
V
DD
=V
DD
Max
1
10
μ
A
μ
A
V
IL
V
IH
V
IHC
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
0.7 V
DD
V
DD
-0.3
0.8
V
V
V
V
OL
V
OH
Output Low Voltage
Output High Voltage
I
OL
=100
μ
A, V
DD
=V
DD
Min
I
OH
=-100
μ
A, V
DD
=V
DD
Min
V
DD
-0.2
0.2
V
V
Table 8:
DC Characteristics (Cmos Compatible)
Recommended System Power-up Timing
Parameter
Description
Min
Unit
T
PU-READ
*
Power-up to Read Operation
100
μ
s
T
PU-WRITE
*
Power-up to Program/Erase Operation
100
μ
s
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 9:
Recommended System Power-up Timing
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