參數(shù)資料
型號(hào)： EM39LV80090H
廠商： ELAN Microelctronics Corp .
英文描述： 8M Bits (512Kx16) Flash Memory
中文描述： 分位（512Kx16）閃存
文件頁(yè)數(shù)： 17/25頁(yè)
文件大小： 295K
代理商： EM39LV80090H
EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 17 of
25
WE# Controlled Block-Erase Timing Diagram
Six-Byte Code For Block-Erase
T
BE
T
WP
5555
2AAA
5555
5555
2AAA
BA
X
XXAA
SW0
XX55
SW1
XX80
SW2
XXAA
SW3
XX55
SW4
XX50
SW5
CE#
OE#
WE#
DQ15-0
Note: This device also supports CE# controlled Block-Erase operation. The WE#and CE#
signals are interchageable as long as minimum timings are met. (See Table 14)
BA
X
=Block
Address
X can be V
IL
or V
IH
, but no other value.
A18~A0
Figure 7:
WE# Controlled Block-Erase Timing Diagram
WE# Controlled Sector-Erase Timing Diagram
Six-Byte Code For Sector-Erase
T
SE
T
WP
5555
2AAA
5555
5555
2AAA
SA
X
XXAA
SW0
XX55
SW1
XX80
SW2
XXAA
SW3
XX55
SW4
XX30
SW5
CE#
OE#
WE#
DQ15-0
Note: This device also supports CE# controlled Sector-Erase operation. The WE#and CE#
signals are interchageable as long as minimum timings are met. (See Table 14)
SA
X
=Sector
Address
X can be V
IL
or V
IH
, but no other value.
A18~A0
Figure 8:
WE# Controlled Sector-Erase Timing Diagram
(See Table 13).
(See Table 13).
相關(guān)PDF資料
PDF描述
EM39LV80090M 8M Bits (512Kx16) Flash Memory
EM39LV80090Y 8M Bits (512Kx16) Flash Memory
EM39LV80070D DDR-I, 14-Bit Registered Buffer
EM39LV80070H 8M Bits (512Kx16) Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EM39LV80090M 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:8M Bits (512Kx16) Flash Memory
EM39LV80090Y 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:8M Bits (512Kx16) Flash Memory
EM39S 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Clipped Sinewave 14 pin DIL compatible
EM39S28-19.44-2.5-30 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Clipped Sinewave 14 pin DIL compatible
EM39S3-19.44-2.5-30 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Clipped Sinewave 14 pin DIL compatible
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