- 您現(xiàn)在的位置：買賣IC網 > PDF目錄384296 > EM6K18000 (Rohm CO.,LTD.) Male terminal; Gender:Male; Number of Contacts:1; Series:MX150L; Color:Black; For Use With:19419, 19429; Pitch Spacing:5.84mm; Wire Size (AWG):22-18 PDF資料下載
參數(shù)資料
| 型號： | EM6K18000 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Male terminal; Gender:Male; Number of Contacts:1; Series:MX150L; Color:Black; For Use With:19419, 19429; Pitch Spacing:5.84mm; Wire Size (AWG):22-18 |
| 中文描述： | 小開關（30V的，0.1A） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | EM6K18000 |
EM6K1
Transistor
Small switching (30V, 0.1A)
EM6K1
!
Features
1) Two 2SK3019 transistors in a single EMT package.
2) The MOSFET elements are independent, eliminating
interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
!
Applications
Interfacing, switching (30V, 100mA)
!
External dimensions
(Units : mm)
Each lead has same dimensions
Abbreviated symbol : K1
EMT6
0
1.2
1.6
(1)
(2)
(5)
(6)
(3)
(4)
0
0
0
0
1
1
!
Structure
Silicon N-channel
MOSFET
!
Packaging specifications
Taping
EM6K1
Type
T2R
8000
Package
Basic ordering unit
(pieces)
Code
!
Equivalent circuit
(1)
Gate
Protection
Diode
Tr1
Tr2
Gate
Protection
Diode
A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain
(2)
(3)
(4)
(5)
(6)
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
V
V
mA
mA
mW/TOTAL
120mW/1ELEMENT
°
C
°
C
mA
mA
V
DSS
V
GSS
I
DR
P
D
Tch
I
D
I
DRP
I
DP
Tstg
Symbol
30
±
20
100
400
100
400
150
150
55~
+
150
Limits
Unit
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 With each pin mounted on the recommended lands.
Drain
source voltage
Gate
source voltage
Drain current
Reverse drain current
Total power dissipation (Tc=25
°
C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
1
1
2
相關PDF資料 |
PDF描述 |
|---|---|
| EM6K1T2R | Small switching (30V, 0.1A) |
| EM78568 | 8-BIT MICRO-CONTROLLER for FRS |
| EMA2 | Emitter common (dual digital transistors) |
| EMA3 | Emitter common (dual digital transistors) |
| EMA4 | General purpose (dual digital transistors) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EM6K1T2R | 功能描述:MOSFET 2N-CH 30V .1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| EM6K31 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Nch Nch MOSFET |
| EM6K31_1009 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Nch Nch MOSFET |
| EM6K31T2R | 功能描述:TRANS MOSFET N-CH 60V 0.25A EMT6 RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| EM6K33 | 制造商:ROHM 制造商全稱:Rohm 功能描述:1.2V Drive Nch + Nch MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。