參數(shù)資料
型號： EMC3DXV5T1
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Dual Common Base-Collector Bias Resistor Transistors(雙共基極-集電極偏置電阻晶體管)
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： LEAD FREE, CASE 463B-01, 5 PIN
文件頁數(shù)： 3/11頁
文件大?。?/td> 96K
代理商： EMC3DXV5T1
EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0, I
C
= 5.0 mA)
EMC2DXV5T1
EMC3DXV5T1
EMC4DXV5T1
EMC5DXV5T1
I
EBO
0.2
0.5
0.2
1.0
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10 A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
EMC2DXV5T1
EMC3DXV5T1
EMC4DXV5T1
EMC5DXV5T1
h
FE
60
35
80
20
100
60
140
35
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(SAT)
0.25
Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
V
OL
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k )
V
OH
4.9
Vdc
Input Resistor
EMC2DXV5T1
EMC3DXV5T1, EMC4DXV5T1
EMC5DXV5T1
R1
15.4
7.0
3.3
22
10
4.7
28.6
13
6.1
k
Resistor Ratio
EMC2DXV5T1
EMC3DXV5T1
EMC4DXV5T1
EMC5DXV5T1
R1/R2
0.8
0.8
0.17
0.38
1.0
1.0
0.21
0.47
1.2
1.2
0.25
0.56
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0, I
C
= 5.0 mA)
EMC2DXV5T1
EMC3DXV5T1
EMC4DXV5T1, EMC5DXV5T1
I
EBO
0.2
0.5
0.1
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10 A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
EMC2DXV5T1
EMC3DXV5T1
EMC4DXV5T1, EMC5DXV5T1
h
FE
60
35
80
100
60
140
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(SAT)
0.25
Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
V
OL
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k )
V
OH
4.9
Vdc
Input Resistor
EMC2DXV5T1
EMC3DXV5T1
EMC4DXV5T1, EMC5DXV5T1
R1
15.4
7.0
33
22
10
47
28.6
13
61
k
Resistor Ratio
EMC2DXV5T1
EMC3DXV5T1
EMC4DXV5T1, EMC5DXV5T1
R1/R2
0.8
0.8
0.8
1.0
1.0
1.0
1.2
1.2
1.2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EMC3DXV5T1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V Dual Common Base Collector NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
EMC3DXV5T5 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V Dual Common Base RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
EMC3DXV5T5G 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V Dual Common Base Collector NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
EMC4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SMT
EMC4001 制造商:SMSC 制造商全稱:SMSC 功能描述:USB 2.0 High-Speed 4-Port Hub Controller
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