- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362695 > EN25F40-75VI (Eon Silicon Solution Inc.) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | EN25F40-75VI |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 18/33頁 |
| 文件大?。?/td> | 477K |
| 代理商： | EN25F40-75VI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
When used only to release the device from the power-down state, the instruction is issued by driving the
CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 16. After the time
duration of t
RES1
(See AC Characteristics) the device will resume normal operation and other instructions
will be accepted. The CS# pin must remain high during the t
RES1
time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure
17. The Device ID value for the EN25F40 are listed in Table 5. The Device ID can be read continuously.
The instruction is completed by driving CS#
high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was
not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If
the device was previously in the Deep Power-down mode, though, the transition to the Standby Power
mode is delayed by t
RES2
, and Chip Select (CS#) must remain High for at least t
RES2
(max), as specified
in Table 10. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive,
decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/09
EN25F40
Figure 16. Release Power-down Instruction Sequence Diagram
Figure 17. Release Power-down / Device ID Instruction Sequence Diagram
相關PDF資料 |
PDF描述 |
|---|---|
| EN25F40-75VIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-100VC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-100VCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-100VI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-100VIP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EN25F40-75VIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-75WCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-75WIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F80 | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F80-100HC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
發(fā)布緊急采購，3分鐘左右您將得到回復。