參數(shù)資料
型號: EN25P10-75VIP
廠商: Eon Silicon Solution Inc.
元件分類: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 20/31頁
文件大?。?/td> 399K
代理商: EN25P10-75VIP
Power-up Timing
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/5/4
EN25P10
Figure 19. Power-up Timing
Table 7. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
VCC(min) to CS# low
10
μs
tPUW(1)
Time delay to Write instruction
1
10
ms
VWI(1)
Write Inhibit Voltage
1
2.5
V
Note:
1.The parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The
Status Register contains 00h (all Status Register bits are 0).
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