參數(shù)資料
型號: EN25P10-75VIP
廠商: Eon Silicon Solution Inc.
元件分類: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 27/31頁
文件大小: 399K
代理商: EN25P10-75VIP
Table 13. DATA RETENTION and ENDURANCE
Parameter Description
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/5/4
EN25P10
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years
Erase/Program Endurance
-40 to 85 °C
100k
cycles
Table 14. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to V
ss
on all pins except I/O pins
(including A9, Reset and OE#)
Min
Max
-1.0 V
12.0 V
Input voltage with respect to V
ss
on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note :
These are latch up characteristics and the device should never be put under these conditions. Refer to
Absolute Maximum ratings for the actual operating limits.
Table 15. CAPACITANCE
( V
CC
= 2.7-3.6V)
Parameter Symbol
Parameter Description
C
IN
Input Capacitance
Test Setup
V
IN
= 0
Typ
Max
Unit
6
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
pF
Note :
Sampled only, not 100% tested, at TA =
25°C and a frequency of 20MHz.
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